双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

SiC power devices

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

80 - 200 V low-power GaN devices

High efficiency in the smallest footprint

Nexperia’s low-power 80–200 V GaN platform brings the benefits of wide-bandgap technology to compact systems where efficiency, size and system cost are critical. Combining ultra-low RDS(on), low QG and QOSS, and clean, fast switching in compact CSP packages, these devices enable higher switching frequencies, reduced magnetics and increased power density. Ideal for power supplies, audio amplifiers, LiDAR and low-power motor drives, they deliver lower losses, simpler thermal management and significant size reduction. Delivering the efficiency, compactness and integration flexibility increasingly required by today's electronic systems.

参数搜索

80 - 200 V GaN for low-power applications
数据加载中,请稍候...
参数搜索不可用。
Visit our documentation center for all documentation

Application note (2)

文件名称 标题 类型 日期
AN90005.pdf Understanding Power GaN FET data sheet parameters Application note 2026-10-01
AN90004.pdf Probing considerations for fast switching applications Application note 2026-10-01

Leaflet (1)

文件名称 标题 类型 日期
nexperia_document_leaflet_GaNFETs_2026.pdf Power GaN FETs Leaflet 2026-10-01

User manual (1)

文件名称 标题 类型 日期
Nexperia_document_book_MOSFETGaNFETApplicationHandbook_2020.pdf MOSFET & GaN FET Application Handbook User manual 2026-10-01

如果您有支持方面的疑问,请告知我们。如需获得设计支持,请告知我们并填写技术支持表格,我们会尽快回复您。

请访问我们的社区论坛或联系我们。


交叉参考