双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

SiC power devices

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)
N74F3038N

N74F3038N End of life

Quad 2-input NAND 30Ohm driver (open collector)

The 74F3038 is a high current Open-Collector Line Driver composed of four 2-input NAND gates. It has been designed to deal with the transmission line effects of PC boards which appear when fast edge rates are used.

The 74F3038 can sink 160mA with a VCC as low as 4.5V. This guarantees incident wave switching with VOL not more than 0.8V while driving impedances as low as 30 Ω. This is applicable with any combination of outputs using continuous duty.

The AC specifications for the 74F3038 were determined using the standard FAST load for open-collector parts of 50pF capacitance, a 500 Ω pull-up resistor and a 500 Ω pull-down resistor.

Reducing the load resistors to 100 Ω will decrease the tPLH propagation delay by approximately 50% while increasing tPHL only slightly. The graph of typical propagation delay versus load resistor (see AC Characteristics section for Graph) shows a spline fit curve from four measured data points, RL= 30 Ω, RL= 100 Ω, RL= 300 Ω, and RL= 500 Ω.
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  • 文档
  • 支持
  • 交互式数据手册

产品细节

Features and benefits

  • 30 Ω line driver
  • 160mA output drive capability
  • High speed
  • Facilitates incident wave switching
  • 3nh lead inductance each on VCC and GND when both side pins are used

Applications

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More information

品质及可靠性免责声明

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Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.

交互式数据手册

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册