Maximum efficiency, minimum footprint for bi-directional switching
Nexperia’s low-voltage GaN bi-directional switches (BDS) redefine current control, voltage blocking and power protection. With ultra-low conduction losses, ultra-fast switching and high power density, they provide an efficient alternative to back-to-back silicon MOSFETs. Intrinsic bi-directional capability simplifies system design while reducing PCB area, component count and thermal stress. Optimized for battery management systems, load switches, protection (OVP/OCP) and power path management, these devices deliver higher efficiency, faster response and improved reliability for smaller, cooler next-generation electronic systems.