Low voltage e-mode GaN FETs

Optimum flexibility for high-power

Delivering optimum flexibility in power systems, Nexperia e-mode GaN FETs are ideal for high-power <200 V applications. Offering superior switching performance due very low QC and QOSS values. Enabling faster charging for e-mobility and wired / wireless changing systems as well as significant space and BOM savings in LiDAR and lower noise in Class D audio amplifiers.


Low voltage e-mode GaN FETs


型号 描述 状态 快速访问
GAN3R2-100CBE 100 V, 3.2 mOhm Gallium Nitride (GaN) FET in a 3.5 mm x 2.13 mm Wafer Level Chip-Scale Package (WLCSP) Production
GAN7R0-150LBE 150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA) package Production
Visit our documentation center for all documentation

Application note (1)

文件名称 标题 类型 日期
AN90021 Power GaN technology: the need for efficient power conversion Application note 2020-08-14

Leaflet (2)

文件名称 标题 类型 日期
nexperia_document_leaflet_GaN_FETs_2023_CHN 高功率 GaN FET 手册 Leaflet 2023-06-19
nexperia_document_leaflet_GaN_FETs_2023 Power GaN FETs leaflet Leaflet 2023-04-26

Marcom graphics (1)

文件名称 标题 类型 日期
WLCSP8_SOT8072-combi_mk wafer level chip-scale package; 8 solder bars; body: 3.5 x 2.13 x 0.429 mm Marcom graphics 2023-04-20

White paper (3)

文件名称 标题 类型 日期
nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese Whitepaper: GaN need for efficient conversion (Japanese) White paper 2021-05-20
nexperia_whitepaper_gan_need_for_efficient_conversion_CHN 白皮书: 功率GaN技术: 高效功率转换的需求 White paper 2020-08-17
nexperia_whitepaper_gan_need_for_efficient_conversion White paper: Power GaN technology: the need for efficient power conversion White paper 2020-07-23