×

BUK6610-75C

N-channel TrenchMOS FET

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC-Q101 standard for use in high performance automotive applications.

可订购部件

型号 可订购的器件编号 订购代码(12NC) 封装 从经销商处购买

特性

  • AEC Q101 compliant
  • Suitable for intermediate level gate drive sources
  • Suitable for thermally demanding environments due to 175 °C rating

目标应用

  • 12 V Automotive systems
  • Electric and electro-hydraulic power steering
  • EngineMotors, lamps and solenoid control management
  • Start-Stop micro-hybrid applications
  • Transmission control
  • Ultra high performance power switching

参数类型

型号Package versionPackage nameProduct statusChannel typeNr of transistorsVDS [max] (V)RDSon [max] @ VGS = 10 V (mΩ)RDSon [max] @ VGS = 5 V (mΩ)RDSon [max] @ VGS = 4.5 V (mΩ)Tj [max] (°C)ID [max] (A)QGD [typ] (nC)QG(tot) [typ] @ VGS = 10 V (nC)Ptot [max] (W)Qr [typ] (nC)VGSth [typ] (V)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)Date
BUK6610-75CSOT404D2PAKEnd of lifeN1751012.514.21757830811581052.3Y39383102010-10-14

PCB Symbol, Footprint and 3D Model

Model Name描述

文档 (18)

文件名称标题类型日期
BUK6610-75CN-channel TrenchMOS FETData sheet2017-05-04
AN10273Power MOSFET single-shot and repetitive avalanche ruggedness ratingApplication note2022-06-20
AN11158Understanding power MOSFET data sheet parametersApplication note2020-07-06
AN11160Designing RC SnubbersApplication note2023-02-03
AN11156Using Power MOSFET Zth CurvesApplication note2021-01-04
AN11243Failure signature of Electrical Overstress on Power MOSFETsApplication note2017-12-21
AN11158_ZHUnderstanding power MOSFET data sheet parametersApplication note2021-01-04
AN11261RC Thermal ModelsApplication note2021-03-18
AN11599Using power MOSFETs in parallelApplication note2016-07-13
AN10874_ZHLFPAK MOSFET thermal design guide, Chinese versionApplication note2020-04-30
AN11113_ZHLFPAK MOSFET thermal design guide - Part 2Application note2020-04-30
BUK6610-75CBUK6610-75C SPICE modelSPICE model2012-04-11
TN00008Power MOSFET frequently asked questions and answersTechnical note2023-01-12
BUK6610-75C_RC_Thermal_ModelBUK6610-75C Thermal design modelThermal design2021-01-18
BUK6610-75CBUK6610-75C Thermal modelThermal model2010-09-24
SOT404_118D2PAK; Reel pack; SMD, 13" Q2/T3 standard product orientation Orderable part number ending ,118 or J Ordering code (12NC) ending 118Packing information2020-04-27
REFLOW_BG-BD-1Reflow soldering profileReflow soldering2021-04-06
WAVE_BG-BD-1Wave soldering profileWave soldering2021-09-08

支持

如果您需要设计/技术支持,请告知我们并填写 应答表, 我们会尽快回复您。

模型

文件名称标题类型日期
BUK6610-75CBUK6610-75C SPICE modelSPICE model2012-04-11
BUK6610-75C_RC_Thermal_ModelBUK6610-75C Thermal design modelThermal design2021-01-18
BUK6610-75CBUK6610-75C Thermal modelThermal model2010-09-24

PCB Symbol, Footprint and 3D Model

Model Name描述

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.