双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

NEVB-NID1101 1.5 V to 5.5 V, 1.5 A, Ideal Diode with Forward Voltage Blocking Evaluation Board

The NEVB-NID1101 evaluation PCB incorporates two NID1101 ideal diodes, enabling the assessment of performance and behavior across various use cases, such as OR-ing, power supply multiplexing, and parallel operation. NEVB-NID1101 offers convenient access to multiple power supply inputs, as well as probe hook-ups for evaluation. Additionally, it includes an NMOS transistor at the output to test short circuit behavior.

NEVB-NID1101

Key features & benefits

  • Input operating voltage range (VIN): 1.5 V to 5.5 V
  • Continuous output current: 1.5 A
  • Two supply inputs (VIN1, VIN2)
  • Two optional USB-C supply inputs for VIN1 and VIN2
  • Access to all device pins
  • Use case selection by means of jumpers
  • Short circuit testing

板上的产品 (1)

Type number Description Status Quick access
NID1101UP Development

相关板块 (1)

Board Description Type Quick links Shop link
NEVB-NID1100 1.5 V to 5.5 V, 1 A, Ideal Diode with Forward Voltage Blocking Evaluation Board nevb-nid1100-1-5-v-to-5-5-v-1-A-ideal-diode-with-forward-voltage-blocking-evaluation-board NEVB-NID1100 1.5 V to 5.5 V, 1 A, Ideal Diode with Forward Voltage Blocking Evaluation Board Evaluation board 订单

板上的产品 (1)

Type number Description Status Quick access
NID1101UP Development

相关板块 (1)

Board Description Type Quick links Shop link
NEVB-NID1100 1.5 V to 5.5 V, 1 A, Ideal Diode with Forward Voltage Blocking Evaluation Board nevb-nid1100-1-5-v-to-5-5-v-1-A-ideal-diode-with-forward-voltage-blocking-evaluation-board NEVB-NID1100 1.5 V to 5.5 V, 1 A, Ideal Diode with Forward Voltage Blocking Evaluation Board Evaluation board 订单

文档 (1)

文件名称 标题 类型 日期
UM90071 NEVB-NID1101 Evaluation board user manual User manual 2025-10-10