- 框图
- Design considerations
- Product listing
- 支持
框图
Recovery / Schottky rectifier
P-channel MOSFET
MOSFET gate protection
N-channel MOSFET
TVS diode
Safety switch
Gate signal conditioning
Ideal diode
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Design considerations
- Series diodes (PN or Schottky): Simple, low cost adn requires minimal design effort, but offers reduced efficiency at higher currents and suffers from forward voltage drop and power loss
- P-channel MOSFET (high-side): Low voltage drop, simple gate drive and good efficiency, but higher RDS(on) than N-channel devices and limited high-current performance
- N-channel MOSFET (high-side or low-side): Very low RDS(on), high current capability and high efficiency, but requires gate drive or charge pump and typically has increased circuit complexity
- Ideal diode (MOSFET-based): Minimal voltage drop, fast reverse-current blocking and best thermal performance but incread BoM costs and design complexity