
NGD4300
4 A peak high-performance dual MOSFET gate driver
The NGD4300 is a high-performance gate driver designed to drive both high-side and low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver can work with rail voltages up to 120 V and uses a bootstrap supply with an integrated diode. Both low-side and high-side output drivers have an independent undervoltage lockout (UVLO) circuit which disables the output driver when the driver supply is below its threshold level. The NGD4300 accepts input control signals complying with both TTL and CMOS signaling as low as 2.5 V (±10%). The low voltage, provided by an internal voltage regulator, is used to supply circuitry in signal paths controlling the low-side and high-side power switches. This enables a low-power operation and a better controlled driver performance irrespective of the IC supply voltage.
Excellent delay matching of 1 ns typical is achieved for the low-side and high-side signal paths. The 4 A peak source and sink current capability of the driver’s output stage guarantees short rise- and fall-times even at high loads.
The NGD4300 is offered in the SO8, HWSON8 and HSO8 packages, and operates over an extended −40 °C to +125 °C temperature range.
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Features and benefits
- Input signals complying with both TTL and CMOS signaling of 2.5 V, 3.3 V, and 5 V
- Output signals with excellent propagation delay matching of 1 ns typical
- Fast propagation times of 13 ns typical
- Switching frequency up to 1 MHz
- 4 A peak source and 5 A sink current capability of the gate driver output stage
- 4 ns rise and 3.5 ns fall times with 1000 pF loads
- Bootstrap supply voltage up to 120 V using an integrated bootstrap diode
- 8 V to 17 V VDD operation range
- Undervoltage protection for both low-side and high-side supplies
- Low-power consumption (IDDO = 0.6 mA typical)
- 8 pin SO8, HWSON8 and HSO8 packages
- ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Specified from -40 °C to +125 °C
Applications
Current-fed, push-pull converters
Two-switch forward power converters
Class-D audio amplifiers
Solid-state motor drives
封装
型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
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NGD4300D | NGD4300DJ (935691535118) |
Active | NGD4300 |
![]() SO8 (SOT96-1) |
SOT96-1 |
SO-SOJ-REFLOW
SO-SOJ-WAVE WAVE_BG-BD-1 |
SOT96-1_118 |
NGD4300DD | NGD4300DDJ (935691635118) |
Active | NGD4300 |
![]() HSO8 (SOT8063-1) |
SOT8063-1 | SOT8063-1_118 | |
NGD4300DD-Q100 | NGD4300DD-Q100J (935691643118) |
Active | NGD4300 |
![]() HSO8 (SOT8063-1) |
SOT8063-1 | SOT8063-1_118 | |
NGD4300GC | NGD4300GCJ (935691536118) |
Active | NGD4300 |
![]() HWSON8 (SOT8047-1) |
SOT8047-1 | SOT8047-1_118 |
环境信息
型号 | 可订购的器件编号 | 化学成分 | RoHS | RHF指示符 |
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NGD4300D | NGD4300DJ | NGD4300D |
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NGD4300DD | NGD4300DDJ | NGD4300DD |
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NGD4300DD-Q100 | NGD4300DD-Q100J | NGD4300DD-Q100 |
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NGD4300GC | NGD4300GCJ | NGD4300GC |
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文档 (10)
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
NGD4300 | 4 A peak high-performance dual MOSFET gate driver | Data sheet | 2025-07-18 |
AN90063 | Questions about package outline drawings | Application note | 2025-06-13 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
SO8_SOT96-1_mk | plastic, small outline package; 8 leads; 1.27 mm pitch; 4.9 mm x 3.9 mm x 1.75 mm body | Marcom graphics | 2017-01-28 |
SOT96-1 | plastic, small outline package; 8 leads; 1.27 mm pitch; 4.9 mm x 3.9 mm x 1.75 mm body | Package information | 2020-04-21 |
SOT8063-1 | plastic thermal enhanced small outline package; 8 leads; 1.27 mm pitch;4.9 mm × 3.9 mm ×1.7 mm body; exposed die pad | Package information | 2024-09-24 |
SOT8047-1 | plastic thermal enhanced very very thin small outline package; no leads;8 terminals; 0.8 mm pitch; 4 x 4 x 0.75 mm body | Package information | 2024-08-21 |
SO-SOJ-REFLOW | Footprint for reflow soldering | Reflow soldering | 2009-10-08 |
SO-SOJ-WAVE | Footprint for wave soldering | Wave soldering | 2009-10-08 |
WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
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