外形图
| 封装版本 | 封装名称 | 封装说明 | 参考 | 发行日期 |
|---|---|---|---|---|
| SOT883B | DFN1006B-3 | plastic, leadless ultra small plastic package; 3 solder lands; 0.35 mm pitch; 1.0 mm x 0.6 mm x 0.37 mm body | 2011-06-30 |
相关文档
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| SOT883B | 3D model for products with SOT883B package | Design support | 2020-01-22 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| DFN1006B-3_SOT883B_mk | plastic, leadless ultra small plastic package; 3 solder lands; 0.35 mm pitch; 1 mm x 0.6 mm x 0.37 mm body | Marcom graphics | 2017-01-28 |
| SOT883B | plastic, leadless ultra small plastic package; 3 solder lands; 0.35 mm pitch; 1.0 mm x 0.6 mm x 0.37 mm body | Package information | 2022-05-20 |
| SOT883B_315 | DFN1006B-3; Reel pack for SMD, 7"; Q3/T4 product orientation | Packing information | 2020-06-12 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
采用此封装的产品
Automotive qualified products (AEC-Q100/Q101)
| 型号 | 描述 | 快速访问 |
|---|---|---|
| PDTC124EMB | NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ | |
| PDTA113EMB | PNP resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ | |
| PMBT3904MB | 40 V, 200 mA NPN switching transistor | |
| PDTA144VMB | PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 10 kΩ | |
| PDTC144VMB | NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 10 kΩ | |
| PDTC124TMB | NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = open | |
| BC847AM | 45 V, 100 mA NPN general-purpose transistors | |
| 2PA1774QM | PNP general purpose transistor | |
| PDTC144WMB | NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 22 kΩ | |
| PDTA144EMB | PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ | |
| PDTC124XMB | NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ | |
| BC857CMB | 45 V, 100 mA PNP general-purpose transistor | |
| PBSS3515MB | 15 V, 0.5 A PNP low VCEsat (BISS) transistor | |
| PESD5V0V2BMB-Q | Very low capacitance bidirectional ESD protection diodes | |
| PDTC143TMB | NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open | |
| PMBT3906MB | 40 V, 200 mA PNP switching transistor | |
| PDTC143EMB | NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ | |
| 2PA1774RM | PNP general purpose transistor | |
| PDTA115EMB | PNP resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ | |
| 2PC4617QMB | 50 V, 100 mA NPN general-purpose transistors | |
| PESD5V0X2UMB-Q | Ultra low capacitance unidirectional double ESD protection diode | |
| 2PA1774SMB | 40 V, 100 mA PNP general-purpose transistors | |
| PDTC115EMB | NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ | |
| 2PC4617RMB | 50 V, 100 mA NPN general-purpose transistors | |
| PBSS3540MB | 40 V, 0.5 A PNP low VCEsat (BISS) transistor | |
| PDTA124EMB | PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ | |
| PDTA144WMB | PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 22 kΩ | |
| PDTA123YMB | PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ | |
| PDTA114EMB | 50 V, 100 mA PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ | |
| 2PA1774SM | PNP general purpose transistor | |
| PDTA123JMB | PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ | |
| PDTC123EMB | NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ | |
| PDTC143XMB | NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ | |
| PESD5V0L2UMB-Q | Low capacitance unidirectional double ESD protection array | |
| PBSS2540MB | 40 V, 0.5 A NPN low VCEsat (BISS) transistor | |
| PDTA144TMB | PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = open | |
| PDTC143ZMB | NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ | |
| BC847BM | 45 V, 100 mA NPN general-purpose transistors | |
| PDTA123EMB | PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ | |
| PDTC144EMB | 50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ | |
| BC857BMB | 45 V, 100 mA PNP general-purpose transistor | |
| PDTC123TMB | NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open | |
| PDTA123TMB | PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open | |
| BC847BMB | 45 V, 100 mA NPN general-purpose transistors | |
| 2PA1774QMB | 40 V, 100 mA PNP general-purpose transistors | |
| PDTA115TMB | PNP resistor-equipped transistor; R1 = 100 kΩ, R2 = open | |
| 2PA1774RMB | 40 V, 100 mA PNP general-purpose transistors | |
| BC857AMB | 45 V, 100 mA PNP general-purpose transistor | |
| BC847CM | 45 V, 100 mA NPN general-purpose transistors | |
| PDTC144TMB | NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = open | |
| PDTA113ZMB | PNP resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ | |
| PDTA124XMB | PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ | |
| PBSS2515MB | 15 V, 0.5 A NPN low VCEsat (BISS) transistor | |
| BC847AMB | 45 V, 100 mA NPN general-purpose transistors | |
| PDTA143TMB | PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open | |
| PDTA124TMB | PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = open | |
| PDTA143ZMB | PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ | |
| PDTC114EMB | NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ | |
| PESD5V0U2BMB-Q | Ultra low capacitance bidirectional double ESD protection array | |
| PDTA143XMB | PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ | |
| PDTC123YMB | NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ | |
| PDTA114YMB | PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ | |
| PMBT2907AMB | 60 V, 600 mA PNP switching transistor | |
| PESD5V0X2UAMB | Ultra low capacitance unidirectional double ESD protection diode | |
| 2PC4617QM | NPN general purpose transistors | |
| PDTC114TMB | NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = open | |
| BC856BMB | 60 V, 100 mA PNP general-purpose transistor | |
| BC846BMB | 65 V, 100 mA NPN general-purpose transistor | |
| BC847CMB | 45 V, 100 mA NPN general-purpose transistors | |
| PDTC115TMB | NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = open | |
| PDTC123JMB | NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ | |
| PDTA114TMB | PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = open | |
| PDTA143EMB | PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ |
Bipolar transistors
| 型号 | 描述 | 快速访问 |
|---|---|---|
| PDTC124EMB | NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ | |
| PDTA113EMB | PNP resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ | |
| PMBT3904MB | 40 V, 200 mA NPN switching transistor | |
| PDTA144VMB | PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 10 kΩ | |
| PDTC144VMB | NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 10 kΩ | |
| PDTC124TMB | NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = open | |
| BC847AM | 45 V, 100 mA NPN general-purpose transistors | |
| 2PA1774QM | PNP general purpose transistor | |
| PDTC144WMB | NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 22 kΩ | |
| PDTA144EMB | PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ | |
| PDTC124XMB | NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ | |
| BC857CMB | 45 V, 100 mA PNP general-purpose transistor | |
| PBSS3515MB | 15 V, 0.5 A PNP low VCEsat (BISS) transistor | |
| PDTC143TMB | NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open | |
| PMBT3906MB | 40 V, 200 mA PNP switching transistor | |
| PDTC143EMB | NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ | |
| 2PA1774RM | PNP general purpose transistor | |
| PDTA115EMB | PNP resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ | |
| PMBT2222AMB | 40 V, 600 mA NPN switching transistor | |
| 2PC4617QMB | 50 V, 100 mA NPN general-purpose transistors | |
| 2PA1774SMB | 40 V, 100 mA PNP general-purpose transistors | |
| PDTC115EMB | NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ | |
| 2PC4617RMB | 50 V, 100 mA NPN general-purpose transistors | |
| PBSS3540MB | 40 V, 0.5 A PNP low VCEsat (BISS) transistor | |
| PDTA124EMB | PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ | |
| PDTA144WMB | PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 22 kΩ | |
| PDTA123YMB | PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ | |
| PDTA114EMB | 50 V, 100 mA PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ | |
| 2PA1774SM | PNP general purpose transistor | |
| PDTA123JMB | PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ | |
| PDTC123EMB | NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ | |
| PDTC143XMB | NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ | |
| PBSS2540MB | 40 V, 0.5 A NPN low VCEsat (BISS) transistor | |
| PDTA144TMB | PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = open | |
| PDTC143ZMB | NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ | |
| BC847BM | 45 V, 100 mA NPN general-purpose transistors | |
| PDTA123EMB | PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ | |
| PDTC144EMB | 50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ | |
| PDTC114YMB | NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ | |
| BC857BMB | 45 V, 100 mA PNP general-purpose transistor | |
| PDTC123TMB | NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open | |
| PDTA123TMB | PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open | |
| BC847BMB | 45 V, 100 mA NPN general-purpose transistors | |
| 2PA1774QMB | 40 V, 100 mA PNP general-purpose transistors | |
| PDTA115TMB | PNP resistor-equipped transistor; R1 = 100 kΩ, R2 = open | |
| 2PA1774RMB | 40 V, 100 mA PNP general-purpose transistors | |
| BC857AMB | 45 V, 100 mA PNP general-purpose transistor | |
| BC847CM | 45 V, 100 mA NPN general-purpose transistors | |
| PDTC144TMB | NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = open | |
| PDTA113ZMB | PNP resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ | |
| PDTA124XMB | PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ | |
| PBSS2515MB | 15 V, 0.5 A NPN low VCEsat (BISS) transistor | |
| BC847AMB | 45 V, 100 mA NPN general-purpose transistors | |
| PDTA143TMB | PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open | |
| PDTA124TMB | PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = open | |
| PDTA143ZMB | PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ | |
| PDTC114EMB | NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ | |
| PDTA143XMB | PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ | |
| PDTC123YMB | NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ | |
| PDTA114YMB | PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ | |
| PMBT2907AMB | 60 V, 600 mA PNP switching transistor | |
| 2PC4617QM | NPN general purpose transistors | |
| PDTC114TMB | NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = open | |
| BC856BMB | 60 V, 100 mA PNP general-purpose transistor | |
| BC846BMB | 65 V, 100 mA NPN general-purpose transistor | |
| BC847CMB | 45 V, 100 mA NPN general-purpose transistors | |
| PDTC115TMB | NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = open | |
| PDTC123JMB | NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ | |
| PDTA114TMB | PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = open | |
| PDTA143EMB | PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ |
ESD protection, TVS, filtering and signal conditioning
| 型号 | 描述 | 快速访问 |
|---|---|---|
| PESD5V0X2UMB | Ultra low capacitance unidirectional double ESD protection diode | |
| PESD5V0V2BMB-Q | Very low capacitance bidirectional ESD protection diodes | |
| PESD5V0X2UMB-Q | Ultra low capacitance unidirectional double ESD protection diode | |
| PESD5V0V2BMB | Very low capacitance bidirectional ESD protection diodes | |
| PESD5V0L2UMB | Low capacitance unidirectional double ESD protection array | |
| PESD5V0L2UMB-Q | Low capacitance unidirectional double ESD protection array | |
| PESD5V0U2BMB-Q | Ultra low capacitance bidirectional double ESD protection array | |
| PESD5V0X2UAMB | Ultra low capacitance unidirectional double ESD protection diode | |
| PESD5V0U2BMB | Ultra low capacitance bidirectional double ESD protection array |
MOSFETs
| 型号 | 描述 | 快速访问 |
|---|---|---|
| PMZB290UNE2 | 20 V, N-channel Trench MOSFET | |
| PMZB550UNE | 30 V, N-channel Trench MOSFET | |
| PMZB200UNE | 30 V, N-channel Trench MOSFET | |
| BSS84AKMB | 50 V, single P-channel Trench MOSFET | |
| PMZB600UNEL | 20 V, N-channel Trench MOSFET | |
| PMZB350UPE | 20 V, single P-channel Trench MOSFET | |
| PMZB320UPE | 30 V, P-channel Trench MOSFET | |
| PMZB950UPEL | 20 V, P-channel Trench MOSFET | |
| PMZB1200UPE | 30 V, P-channel Trench MOSFET | |
| PMZB600UNE | 20 V, N-channel Trench MOSFET | |
| PMZB950UPE | 20 V, P-channel Trench MOSFET | |
| PMZB150UNE | 20 V, N-channel Trench MOSFET | |
| PMZB390UNE | 30 V, N-channel Trench MOSFET | |
| NX7002BKMB | 60 V, N-channel Trench MOSFET |