双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)
NXU0304BQ

NXU0304BQ Production

4-bit dual-supply voltage level translating buffer with Schmitt-trigger; 3-state

The NXU0304 is a 4-bit, dual-supply level translating buffer with Schmitt-trigger inputs and 3-state outputs. It features four data inputs (An and B4), four data outputs (YBn and YA4) and an output enable input (OE).

Both VCCA and VCCB can be supplied at any voltage between 0.9 V and 5.5 V making the device suitable for translating between any of the voltage nodes (1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V and 5.0 V).

This device facilitates asynchronous communication between data buses. Transmit data with a fixed direction (unidirectionally) from the A bus to the B bus on three channels and from the B bus to the A bus for on one channel. The OE pin can be referenced to VCCA and VCCB domain and when OE pin is set LOW the outputs are disabled and enter a high-impedance OFF-state which isolates the buses. The OE pin can be left floating or externally pulled down to ground to ensure the high-impedance state of the outputs during power up or power down.

This device ensures low static and dynamic power consumption across the entire supply range and is fully specified for partial power down applications using IOFF. The IOFF circuitry prevents potentially damaging backflow current through the device when it is powered down or if one of the power supplies is disconnected (floating).

No power supply sequencing is required and output glitches during power supply transitions are prevented. As a result, glitches will not appear on the outputs for supply transitions during power-up/down.
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产品细节

Features and benefits

  • Wide supply voltage range:

    • VCCA: 0.9 V to 5.5 V

    • VCCB: 0.9 V to 5.5 V

  • Low power consumption for supply voltage range 1.1 V to 5.5 V
    • 3 µA (Tamb = 25 °C)
    • 5 µA (Tamb = -40 °C to +125 °C)
  • Schmitt-trigger inputs with integrated static high ohmic pull-down resistor on the input

  • Maximum data rates:

    • 250 Mbps (≥ 1.8 V to 5 V translation)

  • High output drive 12 mA at 5 V

  • Output enable (OE) allows connection to VCCA or VCCB domain

  • Suspend mode when either one of the supply voltages is below 100 mV or disconnected (floating)

  • Low noise overshoot and undershoot <10% of VCCO

  • IOFF circuitry provides partial power-down mode operation

  • Latch-up performance exceeds 100 mA per JESD78D Class II

  • Complies with JEDEC standard:

    • JESD8-12 (0.9 V to 1.3 V)

    • JESD8-11 (1.4 V to 1.6 V)

    • JESD8-7 (1.65 V to 1.95 V)

    • JESD8-5 (2.3 V to 2.7 V)

    • JESD8C (2.7 V to 3.6 V)

    • JESD12-6 (4.5 V to 5.5 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2500 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1500 V

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

  • Similar functions: NXU0104 and NXU0204

Applications

  • General purpose I/O level translation
  • Noisy environments or slow input signals
  • Supports push-pull voltage translation as UART, SPI and JTAG protocols
  • Consumer

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交互式数据手册

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册