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2N7002BKMB

60 V, single N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

此产品已停产

Alternatives

Features and benefits

  • Very fast switching
  • Trench MOSFET technology
  • ESD protection up to 2 kV
  • Logic-level compatible
  • Ultra thin package profile with 0.37 mm height

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits

参数类型

型号 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) VGS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) RDSon [max] @ VGS = 5 V (mΩ) integrated gate-source ESD protection diodes Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 4.5 V (nC) Ptot [max] (W) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
2N7002BKMB SOT883B DFN1006B-3 End of life N 1 60 20 1600 2000 Y 150 0.45 0.1 0.5 0.36 1.6 N 33 7 2012-05-11

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
2N7002BKMB 2N7002BKMB,315
(934065862315)		 Obsolete 0000 0001 SOT883B
DFN1006B-3
(SOT883B) 		SOT883B REFLOW_BG-BD-1
SOT883B_315

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
2N7002BKMB 2N7002BKMB,315 2N7002BKMB rohs rhf rhf
品质及可靠性免责声明

Series

文档 (16)

文件名称 标题 类型 日期
2N7002BKMB 60 V, single N-channel Trench MOSFET Data sheet 2017-05-04
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT883B 3D model for products with SOT883B package Design support 2020-01-22
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
DFN1006B-3_SOT883B_mk plastic, leadless ultra small plastic package; 3 solder lands; 0.35 mm pitch; 1 mm x 0.6 mm x 0.37 mm body Marcom graphics 2017-01-28
SOT883B plastic, leadless ultra small plastic package; 3 solder lands; 0.35 mm pitch; 1.0 mm x 0.6 mm x 0.37 mm body Package information 2022-05-20
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
2N7002BKMB_22_02_2012 2N7002BKMB.22_02_2012 Spice parameter S-parameter 2012-04-12
TN00008 Power MOSFET frequently asked questions and answers Technical note 2023-01-12

支持

如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
2N7002BKMB_22_02_2012 2N7002BKMB.22_02_2012 Spice parameter S-parameter 2012-04-12
SOT883B 3D model for products with SOT883B package Design support 2020-01-22

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册