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Click here for more informationBUK217-50Y
Single channel high-side TOPFET(tm)
Monolithic temperature and overload protected single high-side power switch based on TOPFET™ Trench technology in a 5-pin surface mount or leadform plastic package.
Product availability:
BUK212-50Y in SOT263B-01
BUK217-50Y in SOT426 (D²-PAK).
Features and benefits
- Very low quiescent current
- Power TrenchMOS™
- Overtemperature protection
- Over and undervoltage protection
- Reverse battery protection
- Low charge pump noise
- Loss of ground protection
- CMOS logic capability
- Negative load clampin
- Overload protection
- ESD protection for all pins
- Diagnostic status indication
- Operating voltage down to 5.5 V
- Current limitation.
Applications
- 12 V and 24 V grounded loads
- Inductive loads
- High inrush current loads
- Replacement for relays and fuses.
封装
下表中的所有产品型号均已停产 。
型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
BUK217-50Y | BUK217-50Y,118 (934056318118) |
Obsolete | BUK217 50Y P**XXYY AZ Batch no. | no package information |
文档 (5)
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
AN11156 | Using Power MOSFET Zth Curves | Application note | 2021-01-04 |
AN11160 | Designing RC Snubbers | Application note | 2024-10-21 |
AN11261 | RC Thermal Models | Application note | 2021-03-18 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
No documents available
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.