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BUK9C10-65BIT

N-channel TrenchPLUS logic level FET

N-channel enhancement mode field-effect power transistor in SOT427. This device is manufactured using Nexperia's High-Performance TrenchPLUS technology, featuring very low on-state resistance, integrated current sensing transistors and over temperature protection diodes.

此产品已停产

Features and benefits

  • AEC-Q101 compliant
  • Low conduction losses due to low on-state resistance

Applications

  • 12 V Automotive systems
  • Motors, lamps and solenoid control
  • Powertrain, chassis and body applications

参数类型

型号 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) RDSon [max] @ VGS = 5 V (mΩ) RDSon [max] @ VGS = 4.5 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
BUK9C10-65BIT SOT427 D2PAK-7 End of life N 1 65 8.3 10 11 150 75 21.6 171 0.12 1.5 Y 4170 521 2010-09-02

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
BUK9C10-65BIT BUK9C10-65BIT,118
(934063235118)		 Withdrawn / End-of-life BUK9C10 65BIT SOT427
D2PAK-7
(SOT427) 		SOT427 SOT427_118

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
BUK9C10-65BIT BUK9C10-65BIT,118 BUK9C10-65BIT rohs rhf
品质及可靠性免责声明

Series

文档 (14)

文件名称 标题 类型 日期
BUK9C10-65BIT N-channel TrenchPLUS logic level FET Data sheet 2017-05-04
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2023-02-03
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT427 plastic, single-ended surface-mounted package (D2PAK-7); 7 leads; 1.27 mm pitch; 11 mm x 10 mm x 4.3 mm body Package information 2020-04-21
TN00008 Power MOSFET frequently asked questions and answers Technical note 2023-01-12

支持

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模型

No documents available

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册