双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

IP4238CZ10

Surge protection for ethernet and telecom

The device provides ElectroStatic Discharge (ESD) and surge protection on ethernet and telecom ports. It includes low capacitance protection diodes for high-speed signal lines and is encapsulated in a leadless medium power DFN2626-10 (SOT1197-1) Surface-Mounted Device (SMD) plastic package.

此产品已停产

Features and benefits

  • Pb-free, Restriction of Hazardous Substances (RoHS) compliant and free of halogen and antimony (Dark Green compliant)
  • ±30 kV IEC 61000-4-2 ESD protection of all signal lines
  • 25 A surge protection 8/20 μs according to IEC 61000-4-5
  • Matched 0.5 mm trace spacing
  • Line capacitance of only 3 pF typical for each channel

Applications

High-speed receiver and transmitter port protection for:

  • Ethernet routers, hubs, modems
  • Notebooks, main board graphic cards and ports
  • Set-top boxes and game consoles

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号,(订购码(12NC)) 状态 标示 封装 外形图 回流焊/波峰焊 包装
IP4238CZ10 IP4238CZ10,115
(934065674115)
Obsolete 4238 Standard Prozedure Standard Prozedure no package information

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
IP4238CZ10 IP4238CZ10,115 IP4238CZ10 rohs rhf rhf
品质及可靠性免责声明

文档

No documents available

支持

如果您需要设计/技术支持,请告知我们并填写 应答表 我们会尽快回复您。


Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.


模型

No documents available

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.