双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)
NEX10058UNL

NEX10058UNL Production

1 A triple-output AMOLED display power supply

NEX10058 is designed for powering AMOLED (Active-Matrix Organic LED) displays which require ELVDD, ELVSS and AVDD.

It integrates a boost converter for ELVDD, an inverting buck-boost converter for ELVSS and a boost converter for AVDD. Output voltages of all the three converters can be programmed in digital steps through the digital interface control pins (ASWIRE and ESWIRE).

The device features high efficiency and excellent line and load regulation and transient performance which are well suited for AMOLED applications and is critical to battery-powered applications supply. It features an enhanced output current capability of up to 1 A with precise output voltage accuracy, resulting in higher brightness and superior display performance for AMOLED screens.

NEX10058 is available in a green WLCSP25 package.

Figure 1. Typical application circuit
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产品细节

Features and benefits

  • Input voltage range: 2.5 V to 5.0 V
  • Synchronous boost converter (ELVDD)
    • 4.6 V to 5.0 V output voltage with 100 mV steps
    • 4.6 V default output voltage
    • ±0.5% output accuracy
    • VIN (VAVIN;PVIN) and VOUT bi-directional isolation
  • Synchronous inverting buck-boost converter (ELVSS)
    • -6.6 V to -0.5 V output voltage with 100 mV steps
    • -4.0 V default output voltage
    • ±0.5% output accuracy
    • VIN (VAVIN;PVIN) and VOUT bi-directional isolation
  • ELVDD-ELVSS combined output current capability:
    • 1 A at VIN (VAVIN;PVIN) = 3.2 V; VELVSS = -5.5 V
    • 1 A at VIN (VAVIN;PVIN) = 2.9 V; VELVSS = -4.0 V
    • 0.8 A at VIN (VAVIN;PVIN) = 2.5 V; VELVSS = -4.0 V
  • Synchronous boost converter (AVDD)
    • 7.1 V to 7.8 V output voltage (SET = low) with 100 mV steps
    • 6.9 V to 7.9 V output voltage (SET = high) with 50 mV steps
    • 7.6 V default output voltage
    • ±1% output accuracy
    • 150 mA output current capability
    • VIN (VAVIN;PVIN) and VOUT bi-directional isolation
  • High switching frequency: 1.45 MHz
  • Dual SWIRE interfaces
    • ELVDD/ELVSS and AVDD output voltage programming
    • Output discharge on/off control
    • ELVSS transition time programming
  • Excellent line and load transient performance
  • UVLO and OTSD protection
  • Soft start with inrush current limitation
  • Short-circuit protection
  • High efficiency at full load range
  • 25-ball 1.965 mm x 1.965 mm WLCSP package

Applications

  • Mobile phones
  • Tablets
  • Active-Matrix OLED power supply management

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交互式数据手册

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册