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NGW30T60M3DF

600 V, 30 A trench field-stop IGBT with full rated silicon diode

The NGW30T60M3DF is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third‍⁠-⁠⁠‍generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW30T60M3DF is rated to 175 °C with optimized IGBT turn-off losses, and has a short circuit withstand time of 5 μs. This hard-switching 600 V, 30 A IGBT is optimized for high-voltage, low-frequency industrial power inverter and servo motor drive applications.

Features and benefits

  • Collector current (IC) rated at 30 A

  • Low conduction and switching losses

  • Stable and tight parameters for easy parallel operation

  • Maximum junction temperature of 175 °C

  • Fully rated as a soft fast reverse recovery diode

  • 5 μs short circuit withstand time

  • RoHS compliant, lead-free plating

Applications

  • Motor drives for industrial and consumer appliances

    • Servo motors operating between 5-20 kW (up to 20 kHz) for robotics, elevators, operating grippers, in-line manufacturing, etc.

  • Power inverters

    • Uninterruptible Power Supply (UPS) inverter

    • Photovoltaic (PV) strings

    • EV charging

  • Induction heating

  • Welding

参数类型

型号 Product status VCE [max] (V) IC [typ] (A) Switching frequency tsc [max] (µs) Tj [min] (°C) Tj [max] (°C) Package version Package name
NGW30T60M3DF Production 600 30 M3 5 -40 175 SOT429-2 TO-247-3L

PCB Symbol, Footprint and 3D Model

Model Name 描述

封装

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
NGW30T60M3DF NGW30T60M3DFQ
(934665659127)		 Active 30T60M3DF SOT429-2
TO-247-3L
(SOT429-2) 		SOT429-2 SOT429-2_127

环境信息

型号 可订购的器件编号 化学成分 RoHS RHF指示符
NGW30T60M3DF NGW30T60M3DFQ NGW30T60M3DF rohs rhf
品质及可靠性免责声明

文档 (10)

文件名称 标题 类型 日期
NGW30T60M3DF 600 V, 30 A trench field-stop IGBT with full rated silicon diode Data sheet 2023-07-06
AN90042 Nexperia IGBT family product introduction Application note 2023-07-03
nexperia_igbt_flyer_lr_202304 600/650 V IGBTs for industrial applications Leaflet 2023-07-03
nexperia_igbt_flyer_lr_CHN_202304 600/650 V IGBTs 适用于工业应用 Leaflet 2023-07-03
RS4769_TO-247_PLUS-Combi Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L Marcom graphics 2023-07-05
SOT429-2_TO-247-TL Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L Marcom graphics 2023-04-11
SOT429-2_TO-247-TL Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L Marcom graphics 2023-11-15
SOT429-2 Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L Package information 2022-02-10
SOT429-2_127 TO-247-3L; Tube pack; Standard product orientation Packing information 2023-04-03
NGW30T60M3DF_L1 NGW30T60M3DF SPICE model SPICE model 2023-07-05

支持

如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
NGW30T60M3DF_L1 NGW30T60M3DF SPICE model SPICE model 2023-07-05

PCB Symbol, Footprint and 3D Model

Model Name 描述

订购、定价与供货

型号 Orderable part number Ordering code (12NC) 状态 包装 Packing Quantity 在线购买
NGW30T60M3DF NGW30T60M3DFQ 934665659127 Active SOT429-2_127 450 订单产品

样品

安世半导体客户可通过我们的销售机构或直接通过在线样品商店订购样品： https://extranet.nexperia.com.

样品订单通常需要2-4天寄送时间。

如果您尚未取得安世半导体的直接采购帐号，我们的全球与区域经销网络可以协助您取得样品。

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册

可订购部件

型号 可订购的器件编号 订购代码(12NC) 封装 从经销商处购买
NGW30T60M3DF NGW30T60M3DFQ 934665659127 SOT429-2 订单产品