- 框图
- Design considerations
- Product listing
- 支持
框图
Highlighted components are Nexperia focus products.
Power interface
Power management
推荐产品 (8)
- Ideal diode: 1.2-5.5 V, 1.5 A
- LDO regulators (greater than 30 V)
- Load switches: 5.5 V, 55 mΩ, up to 2.5 A
- Low-noise transformer driver: 1.2 A
- Low VCEsat (BISS) power transistors: LFPAK56
- MOSFETs: N-channel, 40-80 V, RDSon < 10 mΩ, LFPAK/MLPAK
- MOSFETs: P-channel, > 30 V, MLPAK / LFPAK
- Schottky diode: Trench , 40-100 V, CFP2-HP/CFP3-HP/CFP5
Communications interface
Signal processing
Gate driver
Motor drive MOSFETs
推荐产品 (1)
Battery isolation
Motor isolation
选择元件
想要查看本应用中，所使用的 Nexperia 元件的更多信息，请选择上面的元件或单击框图中的元件（蓝色突出显示的部分）。
Design considerations
- Input protection from reverse battery connection is achieved by ideal diode controllers
- Dual-redundancy designs require greater power densities and space saving, enabled by LFPAK56/56E package
- Safe and reliable switching of the MOSFETs is provided by integrated gate drivers
- Integrated converters provide turn-key solution for voltage conversion
- Efficient and smooth switching can be achieved with Schottky diodes in trench technology
- Further space saving, better thermal performance and automatic optical inspection are some of the advantages of small signal discrete and logic components in new DFN and CFP packages
- Signal voltage level differences between design sections can adjusted by bidirectional (NXB family for signal edge acceleration) and unidirectional (NXU family for signal integrity improvement) translators
Product listing
Power interface
Power management
- Ideal diode: 1.2-5.5 V, 1.5 A
- LDO regulators (greater than 30 V)
- Load switches: 5.5 V, 55 mΩ, up to 2.5 A
- Low-noise transformer driver: 1.2 A
- Low VCEsat (BISS) power transistors: LFPAK56
- MOSFETs: N-channel, 40-80 V, RDSon < 10 mΩ, LFPAK/MLPAK
- MOSFETs: P-channel, > 30 V, MLPAK / LFPAK
- Schottky diode: Trench , 40-100 V, CFP2-HP/CFP3-HP/CFP5