双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PDTC115EE

NPN resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm

NPN resistor equipped transistor (see �Simplified outline, symbol and pinning� for package details).

此产品已停产

Features and benefits

  • Built-in bias resistors

  • Simplified circuit design

  • Reduction of component count

  • Reduced pick and place costs.

  • AEC-Q101 qualified

Applications

  • General purpose switching and amplification

  • Inverter and interface circuits

  • Circuit driver.

文档 (3)

文件名称 标题 类型 日期
PDTC115E_SERIES NPN resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm Data sheet 2010-02-08
LSYMTRA Letter Symbols - Transistors; General Other type 1999-05-06
PDTC115EE PDTC115EE SPICE model SPICE model 2024-08-27

支持

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Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.


模型

文件名称 标题 类型 日期
PDTC115EE PDTC115EE SPICE model SPICE model 2024-08-27

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.