双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PESD12VS2UAT

Double ESD protection diode in SOT23 package

Unidirectional double ESD protection diode in common cathode configuration in a small SOT23 Surface-Mounted Device (SMD) plastic package, designed to protect up to two data lines against damage from ElectroStatic Discharge (ESD) and other transients.

此产品已停产

Features and benefits

  • Unidirectional ESD protection of up to two lines
  • Common-cathode configuration
  • Max. peak pulse power: Ppp = 180 W at tp = 8/20 µs
  • Ultra-low reverse leakage current: IRM = 1 nA
  • ESD protection: 30 kV
  • IEC 61000-4-2; level 4 (ESD)
  • IEC 61000-4-5 (surge); Ipp = 5 A at tp = 8/20 µs

Applications

  • Computers and peripherals
  • Communication systems
  • Audio and video equipment
  • Data lines

文档 (1)

文件名称 标题 类型 日期
PESD12VS2UAT PESD12VS2UAT SPICE model SPICE model 2025-04-07

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Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.


模型

文件名称 标题 类型 日期
PESD12VS2UAT PESD12VS2UAT SPICE model SPICE model 2025-04-07

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.