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Dual N-channel TrenchMOS extremely low level FET
Dual extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
Features and benefits
- Suitable for extremely low gate drive sources
- Suitable for high frequency applications due to fast switching characteristics
- Suitable for use in compact designs due to low profile
Applications
- Battery management
- Portable equipment
封装
下表中的所有产品型号均已停产 。
| 型号 | 可订购的器件编号，（订购码(12NC)） | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
|---|---|---|---|---|---|---|---|
| PMWD20XN | PMWD20XN,118 (934058035118) |
Obsolete |
TSSOP8 (SOT530-1) |
SOT530-1 | SOT530-1_118 | ||
| PMWD20XN,518 (934058035518) |
Obsolete | 暂无信息 |
环境信息
下表中的所有产品型号均已停产 。
| 型号 | 可订购的器件编号 | 化学成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PMWD20XN | PMWD20XN,118 | PMWD20XN |
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| PMWD20XN | PMWD20XN,518 | PMWD20XN |
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文档 (3)
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| SOT530-1 | 3D model for products with SOT530-1 package | Design support | 2023-02-07 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SOT530-1 | plastic, thin shrink small outline package; 8 terminals; 0.65 mm pitch; 3 mm x 4.4 mm x 1.1 mm body | Package information | 2022-06-03 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| SOT530-1 | 3D model for products with SOT530-1 package | Design support | 2023-02-07 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.