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PMXB56EN

30 V, N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Trench MOSFET technology

  • Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm

  • Exposed drain pad for excellent thermal conduction

  • Very low Drain-Source on-state resistance RDSon = 49 mΩ

  • Very fast switching

Applications

  • Low-side load switch and charging switch for portable devices

  • Power management in battery-driven portables

  • LED driver

  • DC-to-DC converters

参数类型

型号 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) VGS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) RDSon [max] @ VGS = 4.5 V (mΩ) integrated gate-source ESD protection diodes Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PMXB56EN SOT1215 DFN1010D-3 Production N 1 30 20 55 65 Y 150 3.2 0.4 3.6000001 0.4 1.5 N 209 50 2013-09-23

封装

型号 可订购的器件编号,(订购码(12NC)) 状态 标示 封装 外形图 回流焊/波峰焊 包装
PMXB56EN PMXB56ENZ
(934067234147)
Active 01 10 10 SOT1215
DFN1010D-3
(SOT1215)
SOT1215 REFLOW_BG-BD-1
SOT1215_147

环境信息

型号 可订购的器件编号 化学成分 RoHS RHF指示符
PMXB56EN PMXB56ENZ PMXB56EN rohs rhf rhf
品质及可靠性免责声明

文档 (16)

文件名称 标题 类型 日期
PMXB56EN 30 V, N-channel Trench MOSFET Data sheet 2020-10-27
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT1215 3D model for products with SOT1215 package Design support 2019-10-07
nexperia_document_leaflet_SsMOS_for_mobile_2022-CHN 适合移动和便携式设备的 大批量小信号MOSFET, 采用WLCSP和无引脚DFN封装 Leaflet 2022-07-04
nexperia_document_leaflet_SsMOS_for_mobile_2022 High volume small-signal MOSFETs for mobile and portables, in WLCSP and leadless DFN packages Leaflet 2022-07-04
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
DFN1010D-3_SOT1215_mk plastic, thermal enhanced ultra thin small outline package; 3 terminals; 0.75 mm pitch; 1.1 mm x 1 mm x 0.37 mm body Marcom graphics 2017-01-28
SOT1215 plastic, leadless thermal enhanced ultra thin small outline package with side-wettable flanks (SWF); 3 terminals; 0.75 mm pitch; 1.1 mm x 1 mm x 0.37 mm body Package information 2022-05-27
SOT1215_147 DFN1010D-3; Reel pack, SMD, 7"; Q2/T3 standard product orientation; Orderable part number ending ,147 or Z; Ordering code (12NC) ending 147 Packing information 2020-04-21
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
PMXB56EN_29_08_2013 PMXB56EN Spice model SPICE model 2013-12-12
TN00008 Power MOSFET frequently asked questions and answers Technical note 2023-01-12

支持

如果您需要设计/技术支持,请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
PMXB56EN_29_08_2013 PMXB56EN Spice model SPICE model 2013-12-12
SOT1215 3D model for products with SOT1215 package Design support 2019-10-07

订购、定价与供货

型号 Orderable part number Ordering code (12NC) 状态 包装 Packing Quantity 在线购买
PMXB56EN PMXB56ENZ 934067234147 Active SOT1215_147 5,000 订单产品

样品

安世半导体客户可通过我们的销售机构或直接通过在线样品商店订购样品: https://extranet.nexperia.com.

样品订单通常需要2-4天寄送时间。

如果您尚未取得安世半导体的直接采购帐号,我们的全球与区域经销网络可以协助您取得样品。

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

可订购部件

型号 可订购的器件编号 订购代码(12NC) 封装 从经销商处购买
PMXB56EN PMXB56ENZ 934067234147 SOT1215 订单产品