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PSMN1R7-25YLD

N-channel 25 V, 1.75 mOhm, 200 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Features and benefits

  • 100% Avalanche tested at I(AS) = 142 A

  • Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies

  • Superfast switching with soft-recovery

  • Low spiking and ringing for low EMI designs

  • Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C

  • Optimised for 4.5 V gate drive

  • Low parasitic inductance and resistance

  • High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 175 °C

  • Wave solderable; exposed leads for optimal visual solder inspection

Applications

  • On-board DC:DC solutions for server and telecommunications

  • Secondary-side synchronous rectification in telecommunication applications

  • Voltage regulator modules (VRM)

  • Point-of-Load (POL) modules

  • Power delivery for V-core, ASIC, DDR, GPU, VGA and system components

  • Brushed and brushless motor control

参数类型

型号 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) RDSon [max] @ VGS = 4.5 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 4.5 V (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PSMN1R7-25YLD SOT669 LFPAK56; Power-SO8 Production N 1 25 1.75 2.42 175 200 5.1 21.5 46.699997 135 25.1 1.8 N 3415 1404 2016-03-22

封装

型号 可订购的器件编号,(订购码(12NC)) 状态 标示 封装 外形图 回流焊/波峰焊 包装
PSMN1R7-25YLD PSMN1R7-25YLDX
(934069911115)
Active 1D725L SOT669
LFPAK56; Power-SO8
(SOT669)
SOT669 REFLOW_BG-BD-1
WAVE_BG-BD-1
SOT669_115

环境信息

型号 可订购的器件编号 化学成分 RoHS RHF指示符
PSMN1R7-25YLD PSMN1R7-25YLDX PSMN1R7-25YLD rohs rhf
品质及可靠性免责声明

文档 (21)

文件名称 标题 类型 日期
PSMN1R7-25YLD N-channel 25 V, 1.75 mOhm, 200 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Data sheet 2021-04-23
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11160 Designing RC Snubbers Application note 2023-02-03
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT669 3D model for products with SOT669 package Design support 2017-06-30
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
LFPAK56_POWER-SO8_SOT669_mk plastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body Marcom graphics 2017-01-28
SOT669 plastic, single-ended surface-mounted package; 4 terminals Package information 2022-05-30
SOT669_115 LFPAK56; Reel pack for SMD, 7"; Q1/T1 product orientation Packing information 2022-05-10
Reliability_information_t9_sot669 Reliability information t9_sot669 Quality document 2022-10-18
T9_SOT669_PSMN1R7-25YLD_Nexperia_Quality_document Quality document T9 SOT669 PSMN1R7-25YLD Quality document 2022-10-18
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
PSMN1R7-25YLD PSMN1R7-25YLD SPICE model SPICE model 2016-04-07
TN00008 Power MOSFET frequently asked questions and answers Technical note 2023-01-12
PSMN1R7-25YLD_RC_Thermal_Model PSMN1R7-25YLD Thermal design model Thermal design 2021-01-18
PSMN1R7-25YLD PSMN1R7-25YLD Thermal model Thermal model 2016-04-07
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

支持

如果您需要设计/技术支持,请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
PSMN1R7-25YLD PSMN1R7-25YLD SPICE model SPICE model 2016-04-07
PSMN1R7-25YLD_RC_Thermal_Model PSMN1R7-25YLD Thermal design model Thermal design 2021-01-18
PSMN1R7-25YLD PSMN1R7-25YLD Thermal model Thermal model 2016-04-07
SOT669 3D model for products with SOT669 package Design support 2017-06-30

订购、定价与供货

型号 Orderable part number Ordering code (12NC) 状态 包装 Packing Quantity 在线购买
PSMN1R7-25YLD PSMN1R7-25YLDX 934069911115 Active SOT669_115 1,500 订单产品

样品

安世半导体客户可通过我们的销售机构或直接通过在线样品商店订购样品: https://extranet.nexperia.com.

样品订单通常需要2-4天寄送时间。

如果您尚未取得安世半导体的直接采购帐号,我们的全球与区域经销网络可以协助您取得样品。

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

可订购部件

型号 可订购的器件编号 订购代码(12NC) 封装 从经销商处购买
PSMN1R7-25YLD PSMN1R7-25YLDX 934069911115 SOT669 订单产品