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Click here for more informationFeatures and benefits
- 高可靠性Power SO8封装,额定温度为175°C
- 低寄生电感和电阻
- 采用NextPower超结技术,最适合4.5V栅极驱动
- 超低QG、QGD和QOSS,高/低负载时可实现系统高效率
Applications
- DC-DC转换器
- 负载开关
- 电源OR-ing
- 服务器电源
- 同步整流器
参数类型
型号 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 4.5 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PSMN3R2-30YLC | SOT669 | LFPAK56; Power-SO8 | End of life | N | 1 | 30 | 3.5 | 4.55 | 175 | 100 | 4.1 | 14.200001 | 29.5 | 92 | 19.5 | 1.53 | N | 2081 | 432 | 2011-04-07 |
封装
下表中的所有产品型号已停产。参见表 停产信息 了解更多信息。
型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
PSMN3R2-30YLC | PSMN3R2-30YLC,115 (934065193115) |
Obsolete | 3C230L |
LFPAK56; Power-SO8 (SOT669) |
SOT669 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT669_115 |
Series
文档 (20)
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
PSMN3R2-30YLC | N-channel 30 V, 3.5 mΩ logic level MOSFET in LFPAK using NextPower technology | Data sheet | 2018-04-02 |
AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
AN11156 | Using Power MOSFET Zth Curves | Application note | 2021-01-04 |
AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
AN11160 | Designing RC Snubbers | Application note | 2023-02-03 |
AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
AN11261 | RC Thermal Models | Application note | 2021-03-18 |
AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
SOT669 | 3D model for products with SOT669 package | Design support | 2017-06-30 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
LFPAK56_POWER-SO8_SOT669_mk | plastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body | Marcom graphics | 2017-01-28 |
SOT669 | plastic, single-ended surface-mounted package; 4 terminals | Package information | 2022-05-30 |
REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
PSMN3R2_30YLC | PSMN3R2_30YLC Spice model | SPICE model | 2011-04-12 |
TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2023-01-12 |
PSMN3R2-30YLC | PSMN3R2-30YLC Thermal model | Thermal model | 2011-04-08 |
WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
支持
如果您需要设计/技术支持,请告知我们并填写 应答表 我们会尽快回复您。
模型
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
PSMN3R2_30YLC | PSMN3R2_30YLC Spice model | SPICE model | 2011-04-12 |
PSMN3R2-30YLC | PSMN3R2-30YLC Thermal model | Thermal model | 2011-04-08 |
SOT669 | 3D model for products with SOT669 package | Design support | 2017-06-30 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.