双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)
SOT8063-1

NGD4300-Q100

4 A peak high-performance dual MOSFET gate driver

The NGD4300-Q100 is a high-performance gate driver designed to drive both high-side and low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver can work with rail voltages up to 120 V and uses a bootstrap supply with an integrated diode. Both low-side and high-side output drivers have an independent undervoltage lockout (UVLO) circuit which disables the output driver when the driver supply is below its threshold level. The NGD4300-Q100 accepts input control signals complying with both TTL and CMOS signaling as low as 2.5 V (±10%). The low voltage, provided by an internal voltage regulator, is used to supply circuitry in signal paths controlling the low-side and high-side power switches. This enables a low-power operation and a better controlled driver performance irrespective of the IC supply voltage.

Excellent delay matching of 1 ns typical is achieved for the low-side and high-side signal paths. The 4 A peak source and sink current capability of the driver’s output stage guarantees short rise- and fall-times even at high loads.

The NGD4300-Q100 is offered in the HSO8 package, and operates over an extended −40 °C to +125 °C temperature range.

This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications.

Features and benefits

  • Automotive product qualification in accordance with AEC-Q100 (Grade 1)
    • Specified from -40 °C to +125 °C
  • Input signals complying with both TTL and CMOS signaling of 2.5 V, 3.3 V, and 5 V
  • Output signals with 1 ns propagation delay matching (typical)
  • Propagation times of 13 ns (typical)
  • Switching frequency up to 1 MHz
  • 4 A peak source and 5 A sink current capability of the gate driver output stage
  • 4 ns rise and 3.5 ns fall times with 1000 pF loads
  • Bootstrap supply voltage up to 120 V using an integrated bootstrap diode
  • 8 V to 17 V VDD operation range
  • Undervoltage protection for both low-side and high-side supplies
  • Low-power consumption (IDDO) of 0.6 mA (typical)
  • 8 pin HSO8 package
  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

Applications

  • Current-fed, push-pull converters

  • Two-switch forward power converters

  • Class-D audio amplifiers

  • Solid-state motor drives

封装

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
NGD4300DD-Q100 NGD4300DD-Q100J
(935691643118)		 Active NGD4300 SOT8063-1
HSO8
(SOT8063-1) 		SOT8063-1 SOT8063-1_118

环境信息

型号 可订购的器件编号 化学成分 RoHS RHF指示符
NGD4300DD-Q100 NGD4300DD-Q100J NGD4300DD-Q100 rohs rhf rhf
品质及可靠性免责声明

文档 (3)

文件名称 标题 类型 日期
NGD4300_Q100 4 A peak high-performance dual MOSFET gate driver Data sheet 2025-07-18
AN90063 Questions about package outline drawings Application note 2025-06-13
SOT8063-1 plastic thermal enhanced small outline package; 8 leads; 1.27 mm pitch;4.9 mm × 3.9 mm ×1.7 mm body; exposed die pad Package information 2024-09-24

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