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PESD3V3L5UV

Low capacitance unidirectional fivefold ESD protection diode arrays

Low capacitance unidirectional fivefold ElectroStatic Discharge (ESD) protection diode arrays in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic packages designed to protect up to five unidirectional signal lines from the damage caused by ESD and other transients.

此产品已停产

Features and benefits

  • ESD protection of up to five lines
  • Low diode capacitance
  • Max. peak pulse power: PPPM = 25 W
  • Low clamping voltage: VCL = 12 V
  • Ultra low leakage current: IRM = 75 nA
  • ESD protection up to 20 kV
  • IEC 61000-4-2; level 4 (ESD)
  • IEC 61000-4-5 (surge); IPPM = 2.5 A

Application information

  • Computers and peripherals
  • Audio and video equipment
  • Cellular handsets and accessories
  • Communication systems
  • Portable electronics
  • SIM card protection

参数类型

型号 Package name
PESD3V3L5UV SOT666

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
PESD3V3L5UV PESD3V3L5UV,115
(934057796115)		 Obsolete no package information
PESD3V3L5UV/DG,115
(934062296115)		 Obsolete

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
PESD3V3L5UV PESD3V3L5UV,115 PESD3V3L5UV rohs rhf rhf
PESD3V3L5UV PESD3V3L5UV/DG,115 PESD3V3L5UV rohs rhf rhf
品质及可靠性免责声明

Series

文档 (5)

文件名称 标题 类型 日期
PESDXL5UF_V_Y Low capacitance unidirectional fivefold ESD protection diode arrays Data sheet 2020-05-01
PESD3V3L5UV PESD3V3L5UV SPICE model SPICE model 2012-07-22
PESD3V3L5UV PESD3V3L5UV SPICE model SPICE model 2024-02-20
PESD3V3L5UY Cad-Symbol of PESD3V3L5UY Software 2008-11-20
PESD5V0L5UY Cad-Symbol of PESD5V0L5UY Software 2008-11-20

支持

如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
PESD3V3L5UV PESD3V3L5UV SPICE model SPICE model 2012-07-22
PESD3V3L5UV PESD3V3L5UV SPICE model SPICE model 2024-02-20

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册