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GAN3R2-100CBE

100 V, 3.2 mOhm Gallium Nitride (GaN) FET in a 3.5 mm x 2.13 mm Wafer Level Chip-Scale Package (WLCSP)

The GAN3R2-100CBE is a a general purpose 100 V, 3.2 mΩ Gallium Nitride (GaN) FET in a 15 bump Wafer Level Chip-Scale Package (WLCSP). It is a normally-off e-mode device offering superior performance.

Features and benefits

  • Enhancement mode - normally-off power switch

  • Ultra high frequency switching capability

  • No body diode

  • Low gate charge, low output charge

  • Qualified for standard applications

  • ESD protection

  • RoHS, Pb-free, REACH-compliant

  • High efficiency and high power density

  • Wafer Level Chip-Scale Package (WLCSP) 3.5 mm x 2.13 mm

Applications

  • High power density and high efficiency power conversion

  • AC-to-DC converters, (secondary stage)

  • High frequency DC-to-DC converters in 48 V systems

  • Fast battery charging, mobile phone, laptop, tablet and USB type-C chargers

  • Datacom and telecom (AC-to-DC and DC-to-DC) converters

  • Motor drives

  • LiDAR (non-automotive)

  • Class D audio amplifiers

参数类型

型号 Package version Package name Product status Configuration Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 5 V (mΩ) Tj [max] (°C) QGD [typ] (nC) Ptot [max] (W) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
GAN3R2-100CBE WLCSP8-SOT8072 WLCSP8 Production e-mode N 1 100 3.2 150 1.7 394 1.1 N 999.99994 460 2023-02-22

封装

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
GAN3R2-100CBE GAN3R2-100CBEAZ
(934665899341)		 Active 3R2DCBE WLCSP8-SOT8072
WLCSP8
(WLCSP8-SOT8072) 		WLCSP8-SOT8072 WLCSP8-SOT8072_341

环境信息

型号 可订购的器件编号 化学成分 RoHS RHF指示符
GAN3R2-100CBE GAN3R2-100CBEAZ GAN3R2-100CBE rohs rhf rhf
品质及可靠性免责声明

文档 (21)

文件名称 标题 类型 日期
GAN3R2-100CBE 100 V, 3.2 mOhm Gallium Nitride (GaN) FET in a 3.5 mm x 2.13 mm Wafer Level Chip-Scale Package (WLCSP) Data sheet 2023-04-27
AN90004 Probing considerations for fast switching applications Application note 2019-11-15
AN90005 Understanding Power GaN FET data sheet parameters Application note 2020-06-08
AN90006 Circuit design and PCB layout recommendations for GaN FET half bridges Application note 2019-11-15
AN90021 Power GaN technology: the need for efficient power conversion Application note 2020-08-14
AN90041 Gate drive circuit design for Nexperia 650 V Enhancement mode (e-mode) GaN FETs Application note 2023-05-09
WLCSP8-SOT8072 3D model for products with WLCSP8-SOT8072 package Design support 2023-04-13
2023_0001_NEX_150_Leaflet_update_Power_GaN_FETs Leaflet Power GaN FETs Leaflet 2023-10-24
nexperia_document_leaflet_GaN_FETs_2023 Power GaN FETs leaflet Leaflet 2025-01-10
WLCSP8-SOT8072 wafer level chip-scale package; 8 solder bars; body: 3.5 x 2.13 x 0.429 mm Package information 2023-03-21
WLCSP8-SOT8072_341 WLCSP8; Reel dry pack for SMD, 7"; Q2/T3 product orientation Packing information 2023-04-18
GAN3R2-100CBE GAN3R2-100CBE SPICE model SPICE model 2023-04-12
TN90004 An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability Technical note 2020-07-21
CauerModel_GAN3R2-100CBE Cauer model GAN3R2-100CBE Thermal model 2023-04-12
FosterModel_GAN3R2-100CBE Foster model GAN3R2-100CBE Thermal model 2023-04-12
GAN3R2-100CBE GAN3R2-100CBE RC thermal model Thermal model 2023-04-12
GAN3R2-100CBE_Cauer GAN3R2-100CBE Cauer model Thermal model 2023-04-12
GAN3R2-100CBE_Foster GAN3R2-100CB Foster model Thermal model 2023-04-12
nexperia_whitepaper_gan_need_for_efficient_conversion White paper: Power GaN technology: the need for efficient power conversion White paper 2020-07-23
nexperia_whitepaper_gan_need_for_efficient_conversion_CHN 白皮书: 功率GaN技术： 高效功率转换的需求 White paper 2020-08-17
nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese Whitepaper: GaN need for efficient conversion (Japanese) White paper 2021-05-20

支持

如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
WLCSP8-SOT8072 3D model for products with WLCSP8-SOT8072 package Design support 2023-04-13
GAN3R2-100CBE GAN3R2-100CBE SPICE model SPICE model 2023-04-12
CauerModel_GAN3R2-100CBE Cauer model GAN3R2-100CBE Thermal model 2023-04-12
FosterModel_GAN3R2-100CBE Foster model GAN3R2-100CBE Thermal model 2023-04-12
GAN3R2-100CBE GAN3R2-100CBE RC thermal model Thermal model 2023-04-12
GAN3R2-100CBE_Cauer GAN3R2-100CBE Cauer model Thermal model 2023-04-12
GAN3R2-100CBE_Foster GAN3R2-100CB Foster model Thermal model 2023-04-12

订购、定价与供货

型号 Orderable part number Ordering code (12NC) 状态 包装 Packing Quantity 在线购买
GAN3R2-100CBE GAN3R2-100CBEAZ 934665899341 Active WLCSP8-SOT8072_341 1,500 订单产品

样品

安世半导体客户可通过我们的销售机构或直接通过在线样品商店订购样品： https://extranet.nexperia.com.

样品订单通常需要2-4天寄送时间。

如果您尚未取得安世半导体的直接采购帐号，我们的全球与区域经销网络可以协助您取得样品。

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册

可订购部件

型号 可订购的器件编号 订购代码(12NC) 封装 从经销商处购买
GAN3R2-100CBE GAN3R2-100CBEAZ 934665899341 WLCSP8-SOT8072 订单产品