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2N7002BKT

60 V, 290 mA N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

此产品已停产

Features and benefits

  • Logic-level compatible
  • Very fast switching
  • Trench MOSFET technology
  • ESD protection up to 2 kV
  • AEC-Q101 qualified

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits

参数类型

型号 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) RDSon [max] @ VGS = 5 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 4.5 V (nC) Ptot [max] (W) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
2N7002BKT SOT416 SC-75 End of life N 1 60 1600 2000 150 0.29 0.1 0.5 0.26 1.6 Y 33 7 2011-01-24

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号,(订购码(12NC)) 状态 标示 封装 外形图 回流焊/波峰焊 包装
2N7002BKT 2N7002BKT,115
(934064285115)
Obsolete SOT416
SC-75
(SOT416)
SOT416 SOT416_115

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
2N7002BKT 2N7002BKT,115 2N7002BKT rohs rhf rhf
品质及可靠性免责声明

文档 (13)

文件名称 标题 类型 日期
2N7002BKT 60 V, 290 mA N-channel Trench MOSFET Data sheet 2010-06-18
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT416 plastic, surface-mounted package; 3 leads; 1 mm pitch; 1.6 mm x 0.75 mm x 0.9 mm body Package information 2020-04-21
2N7002BKT_8_18_2010 2N7002BKT_8_18_2010 Spice parameter S-parameter 2012-04-12
TN00008 Power MOSFET frequently asked questions and answers Technical note 2023-01-12

支持

如果您需要设计/技术支持,请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
2N7002BKT_8_18_2010 2N7002BKT_8_18_2010 Spice parameter S-parameter 2012-04-12

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.