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BUK662R7-55C

N-channel TrenchMOS intermediate level FET

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC-Q101 standard for use in high performance automotive applications.

此产品已停产

Features and benefits

  • AEC Q101 compliant
  • Suitable for intermediate level gate drive sources
  • Suitable for thermally demanding environments due to 175 °C rating

Applications

  • 12 V and 24 V Automotive systems
  • Electric and electro-hydraulic power steering
  • Motors, lamps and solenoid control
  • Start-Stop micro-hybrid applications
  • Transmission control
  • Ultra high performance power switching

参数类型

型号 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) RDSon [max] @ VGS = 5 V (mΩ) RDSon [max] @ VGS = 4.5 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
BUK662R7-55C SOT404 D2PAK End of life N 1 55 2.7 3.8 4.4 175 120 75 258 306 176 2.3 Y 11430 1100 2010-09-24

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
BUK662R7-55C BUK662R7-55C,118
(934064229118)		 Obsolete BUK662R7 55C SOT404
D2PAK
(SOT404) 		SOT404 REFLOW_BG-BD-1
WAVE_BG-BD-1
SOT404_118

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
BUK662R7-55C BUK662R7-55C,118 BUK662R7-55C rohs rhf
品质及可靠性免责声明

Series

文档 (21)

文件名称 标题 类型 日期
BUK662R7-55C N-channel TrenchMOS intermediate level FET Data sheet 2017-05-04
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2023-02-03
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT404 3D model for products with SOT226 package Design support 2017-06-30
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
D2PAK_SOT404_mk plastic, single-ended surface-mounted package (D2PAK); 3 terminals (one lead cropped); 2.54 mm pitch; 11 mm x 10 mm x 4.3 mm body Marcom graphics 2017-01-28
SOT404 plastic, single-ended surface-mounted package (D2PAK); 3 terminals (one lead cropped); 2.54 mm pitch; 11 mm x 10 mm x 4.3 mm body Package information 2022-05-27
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
BUK662R7-55C BUK662R7-55C SPICE model SPICE model 2012-04-11
TN00008 Power MOSFET frequently asked questions and answers Technical note 2023-01-12
BUK662R7-55C_RC_Thermal_Model BUK662R7-55C Thermal design model Thermal design 2021-01-18
BUK662R7-55C BUK662R7-55C Thermal model Thermal model 2010-09-24
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

支持

如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
BUK662R7-55C BUK662R7-55C SPICE model SPICE model 2012-04-11
BUK662R7-55C_RC_Thermal_Model BUK662R7-55C Thermal design model Thermal design 2021-01-18
BUK662R7-55C BUK662R7-55C Thermal model Thermal model 2010-09-24
SOT404 3D model for products with SOT226 package Design support 2017-06-30

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册