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BUK9K6R8-40E

Dual N-channel 40 V, 7.2 mΩ logic level MOSFET

Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

可订购部件

型号 可订购的器件编号 订购代码(12NC) 封装 从经销商处购买
BUK9K6R8-40E BUK9K6R8-40EX 934067809115 SOT1205 订单产品
BUK9K6R8-40E/1 BUK9K6R8-40E/1X 934664084115 SOT1205 订单产品
BUK9K6R8-40E/C4 BUK9K6R8-40E/C4X 934661299115 SOT1205 订单产品

特性

  • Dual MOSFET

  • Q101 Compliant

  • Repetitive avalanche rated

  • Suitable for thermally demanding environments due to 175 °C rating

  • True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C

目标应用

  • 12 V Automotive systems

  • Motors, lamps and solenoid control

  • Transmission control

  • Ultra high performance power switching

参数类型

型号Package versionPackage nameProduct statusChannel typeNr of transistorsVDS [max] (V)RDSon [max] @ VGS = 10 V (mΩ)RDSon [max] @ VGS = 5 V (mΩ)Tj [max] (°C)ID [max] (A)QGD [typ] (nC)Ptot [max] (W)Qr [typ] (nC)VGSth [typ] (V)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)Date
BUK9K6R8-40ESOT1205LFPAK56D; Dual LFPAKProductionN2406.17.2175406.864181.7Y22503052013-12-11

PCB Symbol, Footprint and 3D Model

Model Name描述

Package

型号可订购的器件编号,(订购码(12NC))状态标示封装尺寸版本回流焊/波峰焊包装
BUK9K6R8-40EBUK9K6R8-40EX
( 9340 678 09115 )
Active96E840
LFPAK56D; Dual LFPAK
(SOT1205)
SOT1205REFLOW_BG-BD-1
WAVE_BG-BD-1
SOT1205_115
BUK9K6R8-40E/1BUK9K6R8-40E/1X
( 9346 640 84115 )
Active96E840
LFPAK56D; Dual LFPAK
(SOT1205)
SOT1205REFLOW_BG-BD-1
WAVE_BG-BD-1
SOT1205_115
BUK9K6R8-40E/C4BUK9K6R8-40E/C4X
( 9346 612 99115 )
Active96E840
LFPAK56D; Dual LFPAK
(SOT1205)
SOT1205REFLOW_BG-BD-1
WAVE_BG-BD-1
SOT1205_115

环境信息

型号可订购的器件编号化学成分RoHSRHF指示符
BUK9K6R8-40EBUK9K6R8-40EXBUK9K6R8-40E
BUK9K6R8-40E/1BUK9K6R8-40E/1XBUK9K6R8-40E/1
BUK9K6R8-40E/C4BUK9K6R8-40E/C4XBUK9K6R8-40E/C4
品质及可靠性免责声明

文档 (15)

文件名称标题类型日期
BUK9K6R8-40EDual N-channel 40 V, 7.2 mΩ logic level MOSFETData sheet2018-04-05
AN11261RC Thermal ModelsApplication note2021-03-18
AN11599Using power MOSFETs in parallelApplication note2016-07-13
AN90003LFPAK MOSFET thermal design guideApplication note2023-08-22
AN10874_ZHLFPAK MOSFET thermal design guide, Chinese versionApplication note2020-04-30
AN11113_ZHLFPAK MOSFET thermal design guide - Part 2Application note2020-04-30
nexperia_document_leaflet_LFPAK56D_factsheet_LR_201708LFPAK56D the ultimate dual MOSFETLeaflet2017-08-17
BUK9xxxx-40E_LTspice_V3BUK9xxxx-40E Precision ElectroThermal (PET) LTspice modelPET SPICE model2022-12-14
BUK9K6R8-40EBUK9K6R8-40E Spice modelSPICE model2014-01-14
TN00008Power MOSFET frequently asked questions and answersTechnical note2023-01-12
BUK9K6R8-40E_RC_Thermal_ModelBUK9K6R8-40E Thermal design modelThermal design2021-01-18
BUK9K6R8-40EBUK9K6R8-40E Thermal modelThermal model2014-01-14
SOT1205_115LFPAK56D; Reel pack for SMD, 7''; Q1/T1 product orientation Packing information2021-01-11
REFLOW_BG-BD-1Reflow soldering profileReflow soldering2021-04-06
WAVE_BG-BD-1Wave soldering profileWave soldering2021-09-08

支持

如果您需要设计/技术支持,请告知我们并填写 应答表, 我们会尽快回复您。

模型

文件名称标题类型日期
BUK9xxxx-40E_LTspice_V3BUK9xxxx-40E Precision ElectroThermal (PET) LTspice modelPET SPICE model2022-12-14
BUK9K6R8-40EBUK9K6R8-40E Spice modelSPICE model2014-01-14
BUK9K6R8-40E_RC_Thermal_ModelBUK9K6R8-40E Thermal design modelThermal design2021-01-18
BUK9K6R8-40EBUK9K6R8-40E Thermal modelThermal model2014-01-14

PCB Symbol, Footprint and 3D Model

Model Name描述

订购、定价与供货

型号Orderable part numberOrdering code (12NC)包装Packing quantity在线购买
BUK9K6R8-40EBUK9K6R8-40EX934067809115SOT1205_115- 订单产品
BUK9K6R8-40E/1BUK9K6R8-40E/1X934664084115SOT1205_115- 订单产品
BUK9K6R8-40E/C4BUK9K6R8-40E/C4X934661299115SOT1205_115- 订单产品

样品

安世半导体客户可通过我们的销售机构或直接通过在线样品商店订购样品: https://extranet.nexperia.com.

样品订单通常需要2-4天寄送时间。

如果您尚未取得安世半导体的直接采购帐号,我们的全球与区域经销网络可以协助您取得样品。

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.