双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

MLPAK33 MOSFETs

MLPAK33 MOSFETs

General description

主要特性和优势

Features and benefits

  • Large heat sink for high thermal power capability
  • Small 3.3 x 3.3 mm footprint
  • Low height of only 0.8 mm
  • Optimized for a consumer grade application profile
  • Low spiking and ringing for low EMI designs
  • Voltage range VDS 25 - 30 V
  • Low QG and QGD for super-fast switching
  • Low RDSon down to 6 mΩ and ID up to 13 A
  • Logic-level compatible drive voltage
  • Power dissipation (Ptot) of up to 4.8 W

关键应用

Applications

  • Low RDSon load switching for e.g. smartphones
  • DC-to-DC conversion
  • Battery management
  • Charging devices
  • Solid state / hard drives

Parametric search

MLPAK33 MOSFETs
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Products

Automotive qualified products (AEC-Q100/Q101)

型号 描述 状态 快速访问
BUK6Q100-80P 80 V, P-channel Trench MOSFET Production
BUK6Q12-40P 40 V, P-channel Trench MOSFET Production
BUK6Q21-30P 30 V, P-channel Trench MOSFET Production
BUK6Q26-40P 40 V, P-channel Trench MOSFET Production
BUK6Q66-60P 60 V, P-channel Trench MOSFET Production
BUK6Q8R2-30P 30 V, P-channel Trench MOSFET Production
BUK7Q4R9-40H Standard level N-Channel MOSFET in MLPAK33-WF (SOT8002-3D) Production
BUK7Q6R0-40H Standard level N-Channel MOSFET in MLPAK33-WF (SOT8002-3D) Production
BUK7Q7R5-40H Standard level N-Channel MOSFET in MLPAK33-WF (SOT8002-3D) Production
BUK7Q8R4-40H Standard level N-Channel MOSFET in MLPAK33-WF (SOT8002-3D) Qualification
BUK7Q9R5-40H Standard level N-Channel MOSFET in MLPAK33-WF (SOT8002-3D) Qualification
BUK9Q12-40H Logic level N-Channel MOSFET in MLPAK33-WF (SOT8002-3D) Qualification
BUK9Q14-80L 80 V, 14 mOhm logic level N-channel MOSFET in MLPAK33 Production
BUK9Q16-100L 100 V, 16 mOhm logic level N-channel MOSFET in MLPAK33 Production
BUK9Q17-80L 80 V, 17 mOhm logic level N-channel MOSFET in MLPAK33 Production
BUK9Q19-100L 100 V, 19 mOhm logic level N-channel MOSFET in MLPAK33 Production
BUK9Q20-40H Logic level N-Channel MOSFET in MLPAK33-WF (SOT8002-3D) Qualification
BUK9Q22-80L 80 V, 22 mOhm logic level N-channel MOSFET in MLPAK33 Production
BUK9Q25-100L 100 V, 25 mOhm logic level N-channel MOSFET in MLPAK33 Production
BUK9Q28-80L 80 V, 28 mOhm logic level N-channel MOSFET in MLPAK33 Production
BUK9Q29-60E 60 V, N-channel Trench MOSFET Production
BUK9Q32-100L 100 V, 32 mOhm logic level N-channel MOSFET in MLPAK33 Production
BUK9Q34-80L 80 V, 34 mOhm logic level N-channel MOSFET in MLPAK33 Production
BUK9Q39-100L 100 V, 39 mOhm logic level N-channel MOSFET in MLPAK33 Production
BUK9Q45-80L 80 V, 45 mOhm logic level N-channel MOSFET in MLPAK33 Production
BUK9Q4R6-40H Logic level N-Channel MOSFET in MLPAK33-WF (SOT8002-3D) Production
BUK9Q50-100L 100 V, 50 mOhm logic level N-channel MOSFET in MLPAK33 Production
BUK9Q7R0-40H Logic level N-Channel MOSFET in MLPAK33-WF (SOT8002-3D) Production

MOSFETs

型号 描述 状态 快速访问
BUK6Q100-80P 80 V, P-channel Trench MOSFET Production
BUK6Q12-40P 40 V, P-channel Trench MOSFET Production
BUK6Q21-30P 30 V, P-channel Trench MOSFET Production
BUK6Q26-40P 40 V, P-channel Trench MOSFET Production
BUK6Q66-60P 60 V, P-channel Trench MOSFET Production
BUK6Q8R2-30P 30 V, P-channel Trench MOSFET Production
BUK7Q4R9-40H Standard level N-Channel MOSFET in MLPAK33-WF (SOT8002-3D) Production
BUK7Q6R0-40H Standard level N-Channel MOSFET in MLPAK33-WF (SOT8002-3D) Production
BUK7Q7R5-40H Standard level N-Channel MOSFET in MLPAK33-WF (SOT8002-3D) Production
BUK7Q8R4-40H Standard level N-Channel MOSFET in MLPAK33-WF (SOT8002-3D) Qualification
BUK7Q9R5-40H Standard level N-Channel MOSFET in MLPAK33-WF (SOT8002-3D) Qualification
BUK9Q12-40H Logic level N-Channel MOSFET in MLPAK33-WF (SOT8002-3D) Qualification
BUK9Q14-80L 80 V, 14 mOhm logic level N-channel MOSFET in MLPAK33 Production
BUK9Q16-100L 100 V, 16 mOhm logic level N-channel MOSFET in MLPAK33 Production
BUK9Q17-80L 80 V, 17 mOhm logic level N-channel MOSFET in MLPAK33 Production
BUK9Q19-100L 100 V, 19 mOhm logic level N-channel MOSFET in MLPAK33 Production
BUK9Q20-40H Logic level N-Channel MOSFET in MLPAK33-WF (SOT8002-3D) Qualification
BUK9Q22-80L 80 V, 22 mOhm logic level N-channel MOSFET in MLPAK33 Production
BUK9Q25-100L 100 V, 25 mOhm logic level N-channel MOSFET in MLPAK33 Production
BUK9Q28-80L 80 V, 28 mOhm logic level N-channel MOSFET in MLPAK33 Production
BUK9Q29-60E 60 V, N-channel Trench MOSFET Production
BUK9Q32-100L 100 V, 32 mOhm logic level N-channel MOSFET in MLPAK33 Production
BUK9Q34-80L 80 V, 34 mOhm logic level N-channel MOSFET in MLPAK33 Production
BUK9Q39-100L 100 V, 39 mOhm logic level N-channel MOSFET in MLPAK33 Production
BUK9Q45-80L 80 V, 45 mOhm logic level N-channel MOSFET in MLPAK33 Production
BUK9Q4R6-40H Logic level N-Channel MOSFET in MLPAK33-WF (SOT8002-3D) Production
BUK9Q50-100L 100 V, 50 mOhm logic level N-channel MOSFET in MLPAK33 Production
BUK9Q7R0-40H Logic level N-Channel MOSFET in MLPAK33-WF (SOT8002-3D) Production
PXN010-30QL 30 V, N-channel Trench MOSFET Production
PXN014-100QE 100 V, N-channel Trench MOSFET Production
PXN017-30QL 30 V, N-channel Trench MOSFET Production
PXN018-30QL 30 V, N-channel Trench MOSFET Production
PXN4R7-30QL 30 V, N-channel Trench MOSFET Production
PXN5R4-30QL 30 V, N-channel Trench MOSFET Production
PXN6R2-25QL 25 V, N-channel Trench MOSFET Production
PXN6R7-30QL 30 V, N-channel Trench MOSFET Production
PXN7R7-25QL 25 V, N-channel Trench MOSFET Production
PXN8R3-30QL 30 V, N-channel Trench MOSFET Production
PXN9R0-30QL 30 V, N-channel Trench MOSFET Production
PXP010-20QX 20 V, P-channel Trench MOSFET EndOfLife
PXP011-20QX 20 V, P-channel Trench MOSFET Production
PXP012-30QL 30 V, P-channel Trench MOSFET Production
PXP013-30QL 30 V, P-channel Trench MOSFET Production
PXP015-30QL 30 V, P-channel Trench MOSFET Production
PXP018-20QX 20 V, P-channel Trench MOSFET Production
PXP018-30QL 30 V, P-channel Trench MOSFET EndOfLife
PXP020-20QX 20 V, P-channel Trench MOSFET Production
PXP062-60QL 60 V, P-channel Trench MOSFET Production
PXP1500-100QS 100 V, P-channel Trench MOSFET Production
PXP3R7-12QU 12 V, P-channel Trench MOSFET Production
PXP400-100QS 100 V, P-channel Trench MOSFET Production
PXP6R1-30QL 30 V, P-channel Trench MOSFET Production
PXP700-150QS 150 V, P-channel Trench MOSFET Production
PXP8R3-20QX 20 V, P-channel Trench MOSFET Production
PXP9R1-30QL 30 V, P-channel Trench MOSFET Production

Documentation

文件名称 标题 类型 日期
AN11119.pdf Medium power small-signal MOSFETs in DC-to-DC conversion Application note 2013-05-07
AN11599.pdf Using power MOSFETs in parallel Application note 2016-07-13
AN10441.pdf Level shifting techniques in I2C-bus design Application note 2020-02-11
AN90017.pdf Load switches for mobile and computing applications Application note 2020-09-02
RS3472_RS2943_MLPAK33_Combi.png MLPAK33 (SOT8002-2) Combi Marcom graphics 2021-04-21
vp_MLPAK33_MOSFETs.zip MLPAK33 MOSFETs Value proposition 2021-04-21
SOT8002_1.step 3D model for products with SOT8002-1 package Design support 2021-04-30
AN90032.pdf Low temperature soldering, application study Application note 2022-02-22
AN11243.pdf Failure signature of Electrical Overstress on Power MOSFETs Application note 2025-09-08
AN50006.pdf Power MOSFETs in linear mode Application note 2025-09-08
AN50014.pdf Understanding the MOSFET peak drain current rating Application note 2025-09-08
AN90001.pdf Designing in MOSFETs for safe and reliable gate-drive operation Application note 2025-09-08
AN10273.pdf Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2025-09-10
AN11160.pdf Designing RC Snubbers Application note 2025-09-10
AN11261.pdf RC Thermal Models Application note 2025-09-10
AN90011.pdf Half-bridge MOSFET switching and its impact on EMC Application note 2025-09-10
AN90059.pdf Power MOSFET gate driver fundamentals Application note 2025-09-10
AN11156.pdf Using Power MOSFET Zth Curves Application note 2025-10-21
AN11158.pdf Understanding power MOSFET data sheet parameters Application note 2025-10-21
AN11304.pdf MOSFET load switch PCB with thermal measurement Application note 2025-10-21
AN50019.pdf Thermal boundary condition study on MOSFET packages and PCB substrates Application note 2025-10-21

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