外形图
| 封装版本 | 封装名称 | 封装说明 | 参考 | 发行日期 |
|---|---|---|---|---|
| SOT429-5 | TO-247-3 | Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3 | 2025-07-25 |
相关文档
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| SOT429-5 | Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3 | Package information | 2025-11-03 |
采用此封装的产品
IGBT discretes
| 型号 | 描述 | 快速访问 |
|---|---|---|
| NGW75T65M3DFQ | ||
| NGW60T65M3DFQ | ||
| NGW40T65M3DFQ | ||
| NGW75T65M3DFP | 650 V, 75 A trench field-stop IGBT with full rated silicon diode | |
| NGW75T65H3DFP | 650 V, 75 A trench field-stop IGBT with full rated silicon diode | |
| NGW40T65H3DFP | 650 V, 40 A trench field-stop IGBT with full rated silicon diode | |
| NGW50T65M3DFP | 650 V, 50 A trench field-stop IGBT with full rated silicon diode | |
| NGW60T65M3DFP | 650 V, 60 A trench field-stop IGBT with full rated silicon diode | |
| NGW30T65M3DFP | 650 V, 30 A trench field-stop IGBT with full rated silicon diode | |
| NGW40T65H3DHP | 650 V, 40 A trench field-stop IGBT with half rated silicon diode | |
| NGW50T65H3DFP | 650 V, 50 A trench field-stop IGBT with full rated silicon diode | |
| NGW30T65M3DFQ | ||
| NGW40T65M3DFP | 650 V, 40 A trench field-stop IGBT with full rated silicon diode | |
| NGW75T65H3DF | IGBT with trench construction, fast recovery diode |