双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

NID1100GV

NID1100GV Production

1.5 V to 5.5 V, 1 A, ideal diode with forward voltage blocking

The NID1100 is a low forward-voltage drop ideal diode with forward and reverse voltage blocking. It can be used to replace rectifiers in low voltage systems unable to tolerate the high voltage drops of conventional Schottky diodes. The device operates over an input voltage range of 1.5 V to 5.5 V and can support up to 1 A continuous current. They can also be used in dual supply systems in an OR-ing configuration to switch the load seamlessly from one supply to the next.

The EN pin determines the operation mode of the NID1100. When EN is low, the NID1100 blocks voltages in both forward and reverse directions. When the enable input goes high, and the input voltage is higher than the output voltage, the NID1100 starts up in controlled manner limiting the inrush current. Once inrush is complete, the device regulates the voltage between the IN and OUT pins resulting in a forward voltage drop, VFWD, approximately an order of magnitude smaller than similarly rated Schottky diodes. If at any time, the OUT voltage becomes higher than IN voltage, the NID1100 stops conducting with very low leakage currents.

NID1100 also includes short circuit current limiting and over temperature shut down to provide robust protection against load fault conditions. The open-drain ST pin can be used to monitor the status of the NID1100. The ST pin pulls low when the device is disabled, in reverse voltage blocking state or in over temperature shut down.

A variety of power OR-ing configurations are supported for system flexibility:

  • Two, or more, NID1100 devices

  • NID1100s and conventional Schottky diodes

  • NID1100 and an external PMOS

The NID1100 is available in a standard SOT753 (SC-74A) package and is characterized for operation over a junction temperature range of –40 °C to 125 °C.

 

 

 

 

 

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产品细节

Features and benefits

  • Input voltage range of 1.5 V to 5.5 V
  • Low forward drop voltage: VFWD = 120 mV (typ. at 3.6 V input and 1 A load current)

  • Reverse voltage blocking always

    • Low leakage current when reverse biased
  • Forward voltage blocking when disabled

  • Low quiescent current

  • Enhanced load transient response

  • Controlled rise time at start-up

  • Over temperature protection

  • Short circuit protection

  • SOT753 (SC-74A) 5 pins plastic surface-mounted package
  • Specified over Tj= -40 °C to +125 °C

Applications

  • IoT systems

  • Gas meters, smart meters

  • CO Detectors

  • Battery backup systems

  • USB powered devices

Figure 1. Simplified application

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Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.

样品

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交互式数据手册

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册