双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74ALVCH16823DL

74ALVCH16823DL End of life

18-bit bus-interface D-type flip-flop with reset and enable; 3-state

The 74ALVCH16823 is an 18-bit edge-triggered flip-flop featuring separate D-type inputs for each flip-flop and 3-state outputs for bus oriented applications. Incorporates bushold data inputs which eliminate the need for external pull-up resistors to hold unused inputs. The 74ALVCH16823 consists of two sections of nine edge-triggered flip-flops. A clock (nCP) input, an output-enable (nOE) input, a master reset (nMR) input and a clock-enable (nCE) input are provided for each total 9-bit section.

With the clock-enable (nCE) input LOW, the D-type flip-flops will store the state of their individual nDn-inputs that meet the set-up and hold time requirements on the LOW-to-HIGH nCP transition. Taking nCE HIGH disables the clock buffer, thus latching the outputs. Taking the master reset (nMR) input LOW causes all the nQn outputs to go LOW independently of the clock.

When nOE is LOW, the contents of the flip-flops are available at the outputs. When the nOE is HIGH, the outputs go to the high impedance OFF-state. Operation of the nOE input does not affect the state of flip-flops.

Active bus hold circuitry is provided to hold unused or floating data inputs at a valid logic level.

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产品细节

Features and benefits

  • Wide supply voltage range from 1.2 V to 3.6 V

  • CMOS low-power consumption

  • Direct interface with TTL levels

  • Current drive ± 24 mA at 3.0 V

  • MULTIBYTE™ flow-through standard pin-out architecture

  • Low inductance multiple VCC and GND pins for minimum noise and ground bounce

  • Output drive capability 50 Ω transmission lines at 85°C

  • All data inputs have bushold

  • Complies with JEDEC standard no. 8-1A

  • Complies with JEDEC standards:

    • JESD8-5 (2.3 V to 2.7 V)

    • JESD8B/JESD36 (2.7 V to 3.6 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
  • Specified from -40 °C to +85 °C

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Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.

交互式数据手册

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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