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Click here for more informationNP100T12P2T3
1200 V, 100 A Field Stop Trench IGBT
IGBT power module provides ultra-low conduction loss as well as short circuit ruggedness. They are designed for applications such as inverters for motor drivers and servo drivers.
Features and benefits
- Low switching losses and low saturation voltage VCE(sat)
- 10 μs short circuit capability
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175 °C
- Low stray inductance package
- Fast and soft reverse recovery anti-parallel free-wheeling diode
- RoHS compliant product
- Integrated NTC thermistor temperature sensor
Applications
- Inverter for motor drivers and servo drivers
- AC/DC servo drive amplifier
封装
下表中的所有产品型号均已停产 。
| 型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
|---|---|---|---|---|---|---|---|
| NP100T12P2T3 | NP100T12P2T3Z (935691636333) |
Discontinued / End-of-life | LOGO; please refer to marking blank NP100T12P2T3 |
NP2-35P (SOT8053-1) |
SOT8053-1 | SOT8053-1_333 |
文档 (4)
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| NP100T12P2T3 | 1200 V, 100 A, Power Integrated Module | Data sheet | 2024-02-20 |
| AN90043 | Nexperia Power Module family product introduction | Application note | 2024-02-20 |
| AN90063 | Questions about package outline drawings | Application note | 2025-10-22 |
| SOT8053-1 | plastic house, through hole solderable pin with copper baseplate;35 pins; 62.5 mm x 122.5 mm x 17 mm body | Package information | 2024-02-27 |
Longevity
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
模型
No documents available
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.