双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

SiC power devices

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

NPS7601UP

NPS7601UP Production

Compact parallelable 1.5 V to 5.5 V, 1.5 A, low Iq load switch with true reverse current blocking

The NPS7601 is a compact, single-channel, regulated forward-drop load switch with always-on, true reverse current blocking capabilities. It provides efficient switching between power rails, minimizing power loss and enabling precise load control.

The NPS7601 operates across an input voltage range of 1.5 V to 5.5 V, and supports up to 1.5 A of continuous current. An active-high enable (EN) input controls its operation, allowing for isolation of the load by blocking current in both directions when the pin is held low. When EN is asserted high and the input voltage exceeds the output, the NPS7601 turns on in a controlled manner, managing inrush current to prevent voltage droop on the power source.

To achieve fast-acting, true reverse current blocking with minimal transient reverse current, the device utilizes a regulated forward voltage scheme. This active control method overcomes the limitations of common IN-to-OUT voltage comparator-based solutions, which often require hundreds of milliamps before activation.

The NPS7601 is suitable for various applications, including:

  • Power supply sequencing

  • Power supply multiplexing

  • Power supply OR-ing

  • Parallel operation for high-current loads

NPS7601 is offered in a compact WLCSP4 (SOT8113) package and is qualified for operation over an ambient temperature range of -40 °C to 125 °C.

 

 

 

 

 

 

 

 

 

  • 产品细节
  • 文档
  • 支持
  • 订购中
  • 交互式数据手册

产品细节

Features and benefits

  • Input voltage range: 1.5 V to 5.5 V

  • Maximum continuous current: 1.5 A

  • Low quiescent current (IQ): 600 nA (typ)

  • Low shutdown current (ISD): 120 nA (typ)

  • Reverse leakage current: -220 nA (out of the IN pin)

  • True reverse current blocking

    • VIN ≥ 1.5 V (with EN is HIGH and VOUT ≥ VIN)

    • VIN = 0 V (when VOUT ≥ VIN)

  • Controlled rise time at start-up

  • Over-temperature protection

  • Short-circuit protection

  • SOT8113, 4-pin wafer-level chip-scale package

  • Ambient temperature range (Ta): -40 °C to +125 °C

Applications

  • Consumer electronics

  • Wearables

  • IoT devices

  • Battery powered and battery backup systems

  • USB powered devices

Figure 1. Simplified application

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More information

品质及可靠性免责声明

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Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.

样品

作为 Nexperia 的客户,您可以通过我们的销售机构订购样品。

如果您没有 Nexperia 的直接账户,我们的全球和地区分销商网络可为您提供 Nexperia 样品支持。查看官方经销商列表

交互式数据手册

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册