双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74ALVT162827DL

74ALVT162827DL End of life

20-bit buffer/line driver, non-inverting,with 30Ohm termination resistors (3-State)

The 74ALVT162827 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive. It is designed for VCC operation at 2.5 V or 3.3 V with I/O compatibility to 5 V.

The 74ALVT162827 20-bit buffers provide high performance bus interface buffering for wide data/address paths or buses carrying parity. They have NOR Output Enables (nOE1, nOE2) for maximum control flexibility.

The 74ALVT162827 is designed with 30 Ω series resistance in both the pull-up and pull-down output structures. This design reduces line noise in applications such as memory address drivers, clock drivers and bus receivers/transmitters.

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  • 支持
  • 交互式数据手册

产品细节

Features and benefits

  • Multiple VCC and GND pins minimize switching noise

  • 5 V I/O Compatible

  • Live insertion/extraction permitted

  • 3-State output buffers

  • Outputs include series resistance of 30 Ω making external termination resistors unnecessary

  • Power-up 3-State

  • Output capability: ±12 mA

  • Latch-up protection exceeds 500 mA per Jedec Std 17

  • ESD protection exceeds 2000 V per MIL STD 883 Method 3015 and 200 V per Machine Model

  • Bus hold data inputs eliminate the need for external pull-up resistors to hold unused inputs

Applications

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More information

品质及可靠性免责声明

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Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.

交互式数据手册

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册