双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)
74ALVCH16652DGG

74ALVCH16652DGG Production

16-bit transceiver/register with dual enable; 3-state

The 74ALVCH16652 consists of 16 non-inverting bus transceiver circuits with 3-state outputs, D-type flip-flops and control circuitry arranged for multiplexed transmission of data directly from the data bus or from the internal storage registers.

Data on the ‘A’ or ‘B’, or both buses, will be stored in the internal registers, at the appropriate clock inputs (nCPAB or nCPBA) regardless of the select inputs (nSAB and nSBA) or output enable (nOEAB and nOEBA) control inputs.

Depending on the select inputs nSAB and nSBA data can directly go from input to output (real-time mode) or data can be controlled by the clock (storage mode), when OE inputs permit this operating mode.

The output enable inputs nOEAB and nOEBA determine the operation mode of the transceiver. When nOEAB is LOW, no data transmission from nBn to nAn is possible and when nOEBA is HIGH, no data transmission from nBn to nAn is possible.

When nSAB and nSBA are in the real-time transfer mode, it is also possible to store data without using the internal D-type flip-flops by simultaneously enabling nOEAB and nOEBA. In this configuration each output reinforces its input.

Active bus hold circuitry is provided to hold unused or floating data inputs at a valid logic level.
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产品细节

Features and benefits

  • Wide supply voltage range of 1.2 V to 3.6 V

  • CMOS low power consumption

  • Direct interface with TTL levels

  • Current drive ±24 mA at VCC = 3.0 V.

  • MULTIBYTE™ flow-through standard pin-out architecture

  • Low inductance multiple VCC and GND pins for minimum noise and ground bounce

  • All data inputs have bushold

  • Output drive capability 50 Ω transmission lines at 85 °C

  • Complies with JEDEC standards:

    • JESD8-5 (2.3 V to 2.7 V)

    • JESD8B/JESD36 (2.7 V to 3.6 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40 °C to +85 °C

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More information

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The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.

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交互式数据手册

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册