Nexperia
Or cross multiple parts
×

PUSBM12VX4-TL

High-speed USB OTG ESD protection diode arrays

PUSBMxX4-TL is a series of four 4-channel ElectroStatic Discharge (ESD) diode arrays for USB 2.0 (On-The-Go (OTG)) interfaces. The devices provide protection to downstream components from ESD voltages up to ±8 kV contact discharge. They offer three low capacitance ESD protection pins and one VBUS protection diode. They are encapsulated in an ultra thin DFN1616-6 (SOT1189-1/XSON6) plastic package with 0.5 mm pitch. These features make the devices ideal for use in applications requiring component miniaturization, such as mobile phone handsets.

此产品已停产

Features and benefits

  • Pb-free, Restriction of Hazardous Substances (RoHS) and Dark Green compliant
  • ESD protection according to IEC 61000-4-2 level 4: ±8 kV contact discharge
  • Electrical Fast Transients (EFT) protection according to IEC 61000-4-4 40A (5/50 ns)
  • Three pairs of ultra low capacitance (1.1 pF typ.) rail-to-rail ESD protection diodes
  • Ultra thin DFN1616-6 (SOT1189-1/XSON6) plastic package; 0.5 mm pitch

Applications

High-speed USB 2.0 and USB OTG connector ESD protection in:

  • Cellular phone and Personal Communication System (PCS) mobile handsets
  • Mobile internet devices
  • Digital still cameras
  • Portable media players

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
PUSBM12VX4-TL PUSBM12VX4-TL,115
(934065609115)		 Obsolete no package information

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
PUSBM12VX4-TL PUSBM12VX4-TL,115 PUSBM12VX4-TL rohs rhf rhf
品质及可靠性免责声明

文档 (2)

文件名称 标题 类型 日期
PUSBMXX4-TL_SER High-speed USB OTG ESD protection diode arrays Data sheet 2012-06-14
AN10753 ESD protection for USB 2.0 interfaces Application note 2021-04-14

支持

如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

模型

No documents available

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册