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GAN039-650NBB

650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package

The GAN039-650NBB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.

Features and benefits

  • Simplified driver design as standard level MOSFET gate drivers can be used:

    • 0 V to 12 V drive voltage

    • Gate threshold voltage VGSth of 4 V

  • Robust gate oxide with ±20 V VGS rating

  • High gate threshold voltage of 4 V for gate bounce immunity

  • Low body diode Vf for reduced losses and simplified dead-time adjustments

  • Transient over-voltage capability for increased robustness

  • CCPAK package technology:

    • Improved reliability, with reduced Rth(j-mb) for optimal cooling

    • Lower inductances for lower switching losses and EMI

    • 150 °C maximum junction temperature

    • High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages

    • Visual (AOI) soldering inspection, no need for expensive x-ray equipment

    • Easy solder wetting for good mechanical solder joints

Applications

  • Hard and soft switching converters for industrial and datacom power

  • Bridgeless totempole PFC

  • PV and UPS inverters

  • Servo motor drives

参数类型

型号 Package version Package name Product status Configuration Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
GAN039-650NBB SOT8000 CCPAK1212 Qualification cascode N 1 650 39 150 58.5 5 26 250 187 3.9 N 1979.9999 144 2020-07-30

封装

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
GAN039-650NBB GAN039-650NBBJ
(934662151118)		 Samples available / Development 039INBB SOT8000
CCPAK1212
(SOT8000) 		SOT8000 Not available
GAN039-650NBBHP
(934662151128)		 Samples available / Development 039INBB Not available

环境信息

型号 可订购的器件编号 化学成分 RoHS RHF指示符
GAN039-650NBB GAN039-650NBBJ GAN039-650NBB rohs rhf
GAN039-650NBB GAN039-650NBBHP GAN039-650NBB rohs rhf
品质及可靠性免责声明

Series

文档 (19)

文件名称 标题 类型 日期
GAN039-650NBB 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package Data sheet 2023-12-05
AN90004 Probing considerations for fast switching applications Application note 2019-11-15
AN90005 Understanding Power GaN FET data sheet parameters Application note 2020-06-08
AN90006 Circuit design and PCB layout recommendations for GaN FET half bridges Application note 2019-11-15
AN90030 Paralleling of Nexperia cascode GaN FETs in half-bridge topology Application note 2023-03-22
AN90030_translated ハーフブリッジ・トポロジーにおけるNexperia製GaN FETの並列 Application note 2023-04-03
SOT8000 3D model for products with SOT8000 package Design support 2023-02-07
Leaflet_CCPAK_Power_GaN_FETs_update_LR_10112023 Leaflet CCPAK Power GaN FETs 2023 Leaflet 2023-10-11
nexperia_document_leaflet_GaN_FETs_2023 Power GaN FETs leaflet Leaflet 2025-01-10
SOT8000 Plastic, surface mounted copper clip package (CCPAK1212);13 terminals; 2.0 mm pitch, 12 mm x 9.4 mm x 2.5 mm body Package information 2023-12-13
GAN039-650NxB_models_LTspice GAN039-650NxB LTspice model SPICE model 2023-11-28
GAN039-650NxB_models_SIMetrix GAN039-650NxB SIMetrix SPICE model SPICE model 2023-11-28
TN90004 An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability Technical note 2020-07-21
UM90007 NX-HB-GAN039-BSCUL 3.5 kW half-bridge evaluation board with bottom-side cooled GaN FETs User manual 2023-12-04
nexperia_whitepaper_gan_need_for_efficient_conversion White paper: Power GaN technology: the need for efficient power conversion White paper 2020-07-23
nexperia_whitepaper_gan_need_for_efficient_conversion_CHN 白皮书: 功率GaN技术： 高效功率转换的需求 White paper 2020-08-17
nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese Whitepaper: GaN need for efficient conversion (Japanese) White paper 2021-05-20
nexperia_whitepaper_gan_robustness_aecq101 White paper: GaN FET technology and the robustness needed for AEC-Q101 qualification White paper 2020-06-08
nexperia_whitepaper_gan_robustness_aecq101_CN Whitepaper: GaN FET technology and the robustness needed for AEC-Q101 qualification – Chinese (650 V GaN FET技术可提供 出色效率，以及AEC-Q101 认证所需的耐用性) White paper 2020-07-15

支持

如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
GAN039-650NxB_models_LTspice GAN039-650NxB LTspice model SPICE model 2023-11-28
GAN039-650NxB_models_SIMetrix GAN039-650NxB SIMetrix SPICE model SPICE model 2023-11-28
SOT8000 3D model for products with SOT8000 package Design support 2023-02-07

订购、定价与供货

型号 Orderable part number Ordering code (12NC) 状态 包装 Packing Quantity 在线购买

样品

安世半导体客户可通过我们的销售机构或直接通过在线样品商店订购样品： https://extranet.nexperia.com.

样品订单通常需要2-4天寄送时间。

如果您尚未取得安世半导体的直接采购帐号，我们的全球与区域经销网络可以协助您取得样品。

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册

可订购部件

型号 可订购的器件编号 订购代码(12NC) 封装 从经销商处购买
GAN039-650NBB GAN039-650NBBJ 934662151118 SOT8000 订单产品
GAN039-650NBB GAN039-650NBBHP 934662151128 SOT8000 订单产品