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GAN041-650WSB

650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

The GAN041-650WSB is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.

可订购部件

型号 可订购的器件编号 订购代码(12NC) 封装 从经销商处购买
GAN041-650WSB GAN041-650WSBQ 934661752127 SOT429 订单产品

特性

  • Ultra-low reverse recovery charge
  • Simple gate drive (0 V to +10 V or 12 V)
  • Robust gate oxide (±20 V capability)
  • High gate threshold voltage (+4 V) for very good gate bounce immunity
  • Very low source-drain voltage in reverse conduction mode
  • Transient over-voltage capability

目标应用

  • Hard and soft switching converters for industrial and datacom power
  • Bridgeless totempole PFC
  • PV and UPS inverters
  • Servo motor drives

参数类型

型号Package versionPackage nameProduct statusChannel typeNumber of transistorsVDS [max] (V)RDSon [max] @ VGS = 10 V (mΩ)Tj [max] (°C)ID [max] (A)QGD [typ] (nC)QG(tot) [typ] @ VGS = 10 V (nC)Ptot [max] (W)Qr [typ] (nC)VGSth [typ] (V)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)Date
GAN041-650WSBSOT429TO-247ProductionN16504117547.25221871503.9N15001472020-05-14

Package

型号可订购的器件编号,(订购码(12NC))状态标示封装尺寸版本回流焊/波峰焊包装
GAN041-650WSBGAN041-650WSBQ
( 9346 617 52127 )
ActiveGAN041 650WSB
TO-247
(SOT429)
SOT429Horizontal, Rail Pack

品质、可靠性及化学成分

型号可订购的器件编号化学成分RoHS / RHFMSLMSL无铅
GAN041-650WSBGAN041-650WSBQGAN041-650WSB11
品质及可靠性免责声明

文档 (19)

文件名称标题类型日期
GAN041-650WSB650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 packageData sheet2021-01-12
AN90005Understanding Power GaN FET data sheet parametersApplication note2020-06-08
AN90004Probing considerations for fast switching applicationsApplication note2019-11-15
AN90006Circuit design and PCB layout recommendations for GaN FET half bridgesApplication note2019-11-15
AN90021Power GaN technology: the need for efficient power conversionApplication note2020-08-14
AN90030Paralleling of Nexperia GaN FETs in half-bridge topologyApplication note2021-09-21
Nexperia_document_brochure_GaN_2021Nexperia_document_brochure_GaN_2021Brochure2021-05-18
Nexperia_document_brochure_GaN_CHN高功率氮化镓场效应晶体管Brochure2021-05-28
TO-247_SOT429_mkplastic, single-ended through-hole package; 3 leads; 5.45 mm pitch; 20.45 mm x 15.6 mm x 4.95 mm bodyMarcom graphics2019-02-19
sot429_3dplastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3 lead TO-247Outline 3d2021-06-10
GAN041_650WSBGAN041-650WSB SPICE modelSPICE model2021-03-24
TN90004An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalabilityTechnical note2020-07-21
GaN041-650WSB_cauerGaN041-650WSB Cauer thermal modelThermal model2021-03-25
GaN041-650WSBGaN041-650WSB Foster thermal modelThermal model2021-03-25
GaN041-650WSB_RC_Thermal_ModelGaN041-650WSB RC thermal modelThermal model2021-03-25
nexperia_whitepaper_gan_robustness_aecq101White paper: GaN FET technology and the robustness needed for AEC-Q101 qualificationWhite paper2020-06-08
nexperia_whitepaper_gan_robustness_aecq101_CNWhitepaper: GaN FET technology and the robustness needed for AEC-Q101 qualification – Chinese (650 V GaN FET技术可提供 出色效率,以及AEC-Q101 认证所需的耐用性)White paper2020-07-15
nexperia_whitepaper_gan_need_for_efficient_conversionWhite paper: Power GaN technology: the need for efficient power conversionWhite paper2020-07-23
nexperia_whitepaper_gan_need_for_efficient_conversion_CHN白皮书: 功率GaN技术: 高效功率转换的需求White paper2020-08-17

支持

如果您需要设计/技术支持,请告知我们并填写 应答表, 我们会尽快回复您。

模型

文件名称标题类型日期
GAN041_650WSBGAN041-650WSB SPICE modelSPICE model2021-03-24
GaN041-650WSB_cauerGaN041-650WSB Cauer thermal modelThermal model2021-03-25
GaN041-650WSBGaN041-650WSB Foster thermal modelThermal model2021-03-25
GaN041-650WSB_RC_Thermal_ModelGaN041-650WSB RC thermal modelThermal model2021-03-25

订购、定价与供货

型号Orderable part numberOrdering code (12NC)包装在线购买
GAN041-650WSBGAN041-650WSBQ934661752127Horizontal, Rail Pack订单产品

样品

安世半导体客户可通过我们的销售机构或直接通过在线样品商店订购样品: https://extranet.nexperia.com.

样品订单通常需要2-4天寄送时间。

如果您尚未取得安世半导体的直接采购帐号,我们的全球与区域经销网络可以协助您取得样品。