特性
- Ultra-low reverse recovery charge
- Simple gate drive (0 V to +10 V or 12 V)
- Robust gate oxide (±20 V capability)
- High gate threshold voltage (+4 V) for very good gate bounce immunity
- Very low source-drain voltage in reverse conduction mode
- Transient over-voltage capability
目标应用
- Hard and soft switching converters for industrial and datacom power
- Bridgeless totempole PFC
- PV and UPS inverters
- Servo motor drives
参数类型
型号 | Package version | Package name | Product status | Configuration | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Date |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GAN041-650WSB | SOT429 | TO-247 | Production | Cascode | N | 1 | 650 | 41 | 175 | 47.2 | 6.6 | 22 | 187 | 150 | 3.9 | N | 1500 | 147 | 2020-05-14 |
Package
型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 尺寸版本 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
GAN041-650WSB | GAN041-650WSBQ ( 9346 617 52127 ) | Active | GAN041 650WSB | ![]() TO-247 (SOT429) | SOT429 | Horizontal, Rail Pack |
文档 (19)
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
GAN041-650WSB | 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package | Data sheet | 2021-01-12 |
AN90005 | Understanding Power GaN FET data sheet parameters | Application note | 2020-06-08 |
AN90004 | Probing considerations for fast switching applications | Application note | 2019-11-15 |
AN90006 | Circuit design and PCB layout recommendations for GaN FET half bridges | Application note | 2019-11-15 |
AN90021 | Power GaN technology: the need for efficient power conversion | Application note | 2020-08-14 |
AN90030 | Paralleling of Nexperia cascode GaN FETs in half-bridge topology | Application note | 2023-03-22 |
Nexperia_document_brochure_GaN_2021 | Nexperia_document_brochure_GaN_2021 | Brochure | 2021-05-18 |
Nexperia_document_brochure_GaN_CHN | 高功率氮化镓场效应晶体管 | Brochure | 2021-05-28 |
TO-247_SOT429_mk | plastic, single-ended through-hole package; 3 leads; 5.45 mm pitch; 20.45 mm x 15.6 mm x 4.95 mm body | Marcom graphics | 2019-02-19 |
sot429_3d | plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3 lead TO-247 | Outline 3d | 2021-06-10 |
GAN041_650WSB | GAN041-650WSB SPICE model | SPICE model | 2021-03-24 |
TN90004 | An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability | Technical note | 2020-07-21 |
GaN041-650WSB_cauer | GaN041-650WSB Cauer thermal model | Thermal model | 2021-03-25 |
GaN041-650WSB | GaN041-650WSB Foster thermal model | Thermal model | 2021-03-25 |
GaN041-650WSB_RC_Thermal_Model | GaN041-650WSB RC thermal model | Thermal model | 2021-03-25 |
nexperia_whitepaper_gan_robustness_aecq101 | White paper: GaN FET technology and the robustness needed for AEC-Q101 qualification | White paper | 2020-06-08 |
nexperia_whitepaper_gan_robustness_aecq101_CN | Whitepaper: GaN FET technology and the robustness needed for AEC-Q101 qualification – Chinese (650 V GaN FET技术可提供 出色效率,以及AEC-Q101 认证所需的耐用性) | White paper | 2020-07-15 |
nexperia_whitepaper_gan_need_for_efficient_conversion | White paper: Power GaN technology: the need for efficient power conversion | White paper | 2020-07-23 |
nexperia_whitepaper_gan_need_for_efficient_conversion_CHN | 白皮书: 功率GaN技术: 高效功率转换的需求 | White paper | 2020-08-17 |
支持
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模型
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
GAN041_650WSB | GAN041-650WSB SPICE model | SPICE model | 2021-03-24 |
GaN041-650WSB_cauer | GaN041-650WSB Cauer thermal model | Thermal model | 2021-03-25 |
GaN041-650WSB | GaN041-650WSB Foster thermal model | Thermal model | 2021-03-25 |
GaN041-650WSB_RC_Thermal_Model | GaN041-650WSB RC thermal model | Thermal model | 2021-03-25 |
订购、定价与供货
型号 | Orderable part number | Ordering code (12NC) | 包装 | Packing quantity | 在线购买 |
---|---|---|---|---|---|
GAN041-650WSB | GAN041-650WSBQ | 934661752127 | Horizontal, Rail Pack | - | 订单产品 |
样品
安世半导体客户可通过我们的销售机构或直接通过在线样品商店订购样品: https://extranet.nexperia.com.
样品订单通常需要2-4天寄送时间。
如果您尚未取得安世半导体的直接采购帐号,我们的全球与区域经销网络可以协助您取得样品。