×

GAN041-650WSB

650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

The GAN041-650WSB is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.

可订购部件

型号 可订购的器件编号 订购代码(12NC) 封装 从经销商处购买
GAN041-650WSB GAN041-650WSBQ 934661752127 SOT429 订单产品

特性

  • Ultra-low reverse recovery charge

  • Simple gate drive (0 V to +10 V or 12 V)

  • Robust gate oxide (±20 V capability)

  • High gate threshold voltage (+4 V) for very good gate bounce immunity

  • Very low source-drain voltage in reverse conduction mode

  • Transient over-voltage capability

目标应用

  • Hard and soft switching converters for industrial and datacom power

  • Bridgeless totempole PFC

  • PV and UPS inverters

  • Servo motor drives

参数类型

型号Package versionPackage nameProduct statusConfigurationChannel typeNr of transistorsVDS [max] (V)RDSon [max] @ VGS = 10 V (mΩ)Tj [max] (°C)ID [max] (A)QGD [typ] (nC)QG(tot) [typ] @ VGS = 10 V (nC)Ptot [max] (W)Qr [typ] (nC)VGSth [typ] (V)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)Date
GAN041-650WSBSOT429TO-247-3ProductioncascodeN16504117547.26.6221871503.9N15001472020-05-14

PCB Symbol, Footprint and 3D Model

Model Name描述

Package

型号可订购的器件编号,(订购码(12NC))状态标示封装尺寸版本回流焊/波峰焊包装
GAN041-650WSBGAN041-650WSBQ
( 9346 617 52127 )
ActiveGAN041 650WSB
TO-247-3
(SOT429)
SOT429SOT429_127

环境信息

型号可订购的器件编号化学成分RoHSRHF指示符
GAN041-650WSBGAN041-650WSBQGAN041-650WSB
品质及可靠性免责声明

文档 (18)

文件名称标题类型日期
GAN041-650WSB650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 packageData sheet2021-01-12
AN90005Understanding Power GaN FET data sheet parametersApplication note2020-06-08
AN90004Probing considerations for fast switching applicationsApplication note2019-11-15
AN90006Circuit design and PCB layout recommendations for GaN FET half bridgesApplication note2019-11-15
AN90021Power GaN technology: the need for efficient power conversionApplication note2020-08-14
AN90030Paralleling of Nexperia cascode GaN FETs in half-bridge topologyApplication note2023-03-22
TO-247_SOT429_mkplastic, single-ended through-hole package; 3 leads; 5.45 mm pitch; 20.45 mm x 15.6 mm x 4.95 mm bodyMarcom graphics2019-02-19
sot429_3dplastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3 lead TO-247Outline 3d2021-06-10
GAN041_650WSBGAN041-650WSB SPICE modelSPICE model2021-03-24
TN90004An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalabilityTechnical note2020-07-21
GaN041-650WSB_cauerGaN041-650WSB Cauer thermal modelThermal model2021-03-25
GaN041-650WSBGaN041-650WSB Foster thermal modelThermal model2021-03-25
GaN041-650WSB_RC_Thermal_ModelGaN041-650WSB RC thermal modelThermal model2021-03-25
nexperia_whitepaper_gan_robustness_aecq101White paper: GaN FET technology and the robustness needed for AEC-Q101 qualificationWhite paper2020-06-08
nexperia_whitepaper_gan_robustness_aecq101_CNWhitepaper: GaN FET technology and the robustness needed for AEC-Q101 qualification – Chinese (650 V GaN FET技术可提供 出色效率,以及AEC-Q101 认证所需的耐用性)White paper2020-07-15
nexperia_whitepaper_gan_need_for_efficient_conversionWhite paper: Power GaN technology: the need for efficient power conversionWhite paper2020-07-23
nexperia_whitepaper_gan_need_for_efficient_conversion_CHN白皮书: 功率GaN技术: 高效功率转换的需求White paper2020-08-17
SOT429_127TO-247; Tube pack; Standard product orientationPacking information2019-12-17

支持

如果您需要设计/技术支持,请告知我们并填写 应答表, 我们会尽快回复您。

模型

文件名称标题类型日期
GAN041_650WSBGAN041-650WSB SPICE modelSPICE model2021-03-24
GaN041-650WSB_cauerGaN041-650WSB Cauer thermal modelThermal model2021-03-25
GaN041-650WSBGaN041-650WSB Foster thermal modelThermal model2021-03-25
GaN041-650WSB_RC_Thermal_ModelGaN041-650WSB RC thermal modelThermal model2021-03-25

PCB Symbol, Footprint and 3D Model

Model Name描述

订购、定价与供货

型号Orderable part numberOrdering code (12NC)包装Packing quantity在线购买
GAN041-650WSBGAN041-650WSBQ934661752127SOT429_127- 订单产品

样品

安世半导体客户可通过我们的销售机构或直接通过在线样品商店订购样品: https://extranet.nexperia.com.

样品订单通常需要2-4天寄送时间。

如果您尚未取得安世半导体的直接采购帐号,我们的全球与区域经销网络可以协助您取得样品。

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.