可订购部件
| 型号 | 可订购的器件编号 | 订购代码(12NC) | 封装 | 从经销商处购买 |
|---|---|---|---|---|
| GANE011-080CBA | GANE011-080CBAZ | 934670834341 | WLCSP9_SOT8134 | 订单产品 |
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Click here for more informationAEC-Q101 qualified 80 V, 11 mOhm Gallium Nitride (GaN) FET in a 1.5 mm x 1.5 mm Wafer Level Chip-Scale Package (WLCSP)
The GANE011-080CBA is a a general purpose 80 V, 11 mΩ Gallium Nitride (GaN) FET in a Wafer Level Chip-Scale Package (WLCSP). It is a normally-off e-mode device offering superior performance and very low on-state resistance. It passes AEC-Q101 qualification.
Enhancement mode - normally-off power switch
Ultra high frequency switching capability
No body diode
Low gate charge, low output charge
Tested to AEC-Q101 standard
RoHS, Pb-free, REACH-compliant
High efficiency and high power density
Wafer Level Chip-Scale Package (WLCSP) 1.5 mm x 1.5 mm
LiDAR Application
Class-D Audio Amplifier
High Power Density and High switching frequency DC-to-DC Converters
AC-to-DC converters (secondary stage)
High Intensity Headlamps
Motor drives
| 型号 | Package version | Package name | Product status | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 5 V (mΩ) | Tj [max] (°C) | QGD [typ] (nC) | Ptot [max] (W) | VGSth [typ] (V) | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GANE011‑080CBA | WLCSP9_SOT8134 | WLCSP9 | Production | 1 | 80 | 11 | 150 | 0.4 | 16.2 | 1.1 | 268 | 127 | 2025-11-24 |
| 型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
|---|---|---|---|---|---|---|---|
| GANE011‑080CBA | GANE011‑080CBAZ (934670834341) |
Active | 011 CCBA |
WLCSP9 (WLCSP9_SOT8134) |
暂无信息 | 暂无信息 |
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| GANE011-080CBA | AEC-Q101 qualified 80 V, 11 mOhm Gallium Nitride (GaN) FET in a 1.5 mm x 1.5 mm Wafer Level Chip-Scale Package (WLCSP) | Data sheet | 2025-11-20 |
The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.
No documents available
| 型号 | Orderable part number | Ordering code (12NC) | 状态 | 包装 | Packing Quantity | 在线购买 |
|---|---|---|---|---|---|---|
| GANE011‑080CBA | GANE011‑080CBAZ | 934670834341 | Active | 暂无信息 | 2,500 |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.