特性
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Fully optimized Safe Operating Area (SOA) for superior linear mode operation
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Low RDSon for low I²R conduction losses
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LFPAK56E package for applications that demand the highest performance and reliability in a 30 mm² footprint
目标应用
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Hot swap
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Load switch
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Soft start
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E-fuse
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Telecommunication systems based on a 48 V backplane/supply rail
参数类型
型号 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | ISOA [max] @ tp = 1 ms (A) | ISOA [max] @ tp = 10 ms (A) | ISOA [max] @ tp = 100 ms (A) | Date |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PSMN4R2-80YSE | SOT1023 | LFPAK56E; Power-SO8 | Production | N | 1 | 80 | 4.2 | 175 | 170 | 11 | 73 | 294 | 35 | 2.6 | N | 5714 | 1488 | 12.36 | 5.43 | 3.05 | 2020-10-12 |
PCB Symbol, Footprint and 3D Model
Model Name | 描述 |
---|---|
Package
型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 尺寸版本 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
PSMN4R2-80YSE | PSMN4R2-80YSEX ( 9346 625 76115 ) | Active | 4E2S80J | ![]() LFPAK56E; Power-SO8 (SOT1023) | SOT1023 | REFLOW_BG-BD-1 | SOT1023_115 |
文档 (15)
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
PSMN4R2-80YSE | N-channel 80 V, 4.2 mOhm MOSFET with enhanced SOA in LFPAK56E | Data sheet | 2021-09-03 |
AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
AN11261 | RC Thermal Models | Application note | 2021-03-18 |
AN90003 | LFPAK MOSFET thermal design guide | Application note | 2023-08-22 |
SOT1023 | 3D model for products with SOT1023 package | Design support | 2017-06-29 |
Reliability_information_t12_sot1023 | Reliability information t12 sot1023 | Quality document | 2022-08-11 |
T12_SOT1023_PSMN4R2-80YSE_Nexperia_Quality_document | T12 SOT1023 PSMN4R2-80YSE Nexperia Quality document | Quality document | 2022-08-11 |
PSMN4R2-80YSE | PSMN4R2-80YSE SPICE model | SPICE model | 2021-07-20 |
CauerModel_PSMN4R2-80YSE | Cauer model PSMN4R2-80YSE | Thermal model | 2021-07-20 |
FosterModel_PSMN4R2-80YSE | Foster model PSMN4R2-80YSE | Thermal model | 2021-07-20 |
PSMN4R2-80YSE_Cauer | PSMN4R2-80YSE Cauer model | Thermal model | 2021-07-20 |
PSMN4R2-80YSE_Foster | PSMN4R2-80YSE Foster model | Thermal model | 2021-07-20 |
PSMN4R2-80YSE | PSMN4R2-80YSE FloTherm model | Thermal model | 2021-07-20 |
SOT1023_115 | LFPAK56; Reel pack for SMD, 7"; Q1/T1 product orientation | Packing information | 2022-06-07 |
REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
支持
如果您需要设计/技术支持,请告知我们并填写 应答表, 我们会尽快回复您。
模型
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
SOT1023 | 3D model for products with SOT1023 package | Design support | 2017-06-29 |
PSMN4R2-80YSE | PSMN4R2-80YSE SPICE model | SPICE model | 2021-07-20 |
CauerModel_PSMN4R2-80YSE | Cauer model PSMN4R2-80YSE | Thermal model | 2021-07-20 |
FosterModel_PSMN4R2-80YSE | Foster model PSMN4R2-80YSE | Thermal model | 2021-07-20 |
PSMN4R2-80YSE_Cauer | PSMN4R2-80YSE Cauer model | Thermal model | 2021-07-20 |
PSMN4R2-80YSE_Foster | PSMN4R2-80YSE Foster model | Thermal model | 2021-07-20 |
PSMN4R2-80YSE | PSMN4R2-80YSE FloTherm model | Thermal model | 2021-07-20 |
PCB Symbol, Footprint and 3D Model
Model Name | 描述 |
---|---|
订购、定价与供货
型号 | Orderable part number | Ordering code (12NC) | 包装 | Packing quantity | 在线购买 |
---|---|---|---|---|---|
PSMN4R2-80YSE | PSMN4R2-80YSEX | 934662576115 | SOT1023_115 | - | 订单产品 |
样品
安世半导体客户可通过我们的销售机构或直接通过在线样品商店订购样品: https://extranet.nexperia.com.
样品订单通常需要2-4天寄送时间。
如果您尚未取得安世半导体的直接采购帐号,我们的全球与区域经销网络可以协助您取得样品。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.