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PHD9NQ20T

N-channel TrenchMOS standard level FET

标准电平N沟道增强型场效应晶体管(FET),采用塑料封装,使用TrenchMOS技术。该产品仅设计适用于计算、通信、消费电子和工业应用。

该产品已停产。参见单击此处了解停产信息和替代产品。

Features and benefits

  • 低热阻抗,因而工作功率更高
  • 低导通电阻,因而导通损耗很小
  • 快速开关特性,因而适用于高频应用

Applications

  • DC-DC转换器
  • 通用开关
  • 电机控制电路
  • 离线开关电源
  • 电视和计算机显示器电源

参数类型

型号 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PHD9NQ20T SOT428 DPAK End of life N 1 200 400 175 8.7 12 24 88 500 3 N 959 93 2010-12-16

封装

下表中的所有产品型号已停产。参见表 停产信息 了解更多信息。

型号 可订购的器件编号,(订购码(12NC)) 状态 标示 封装 外形图 回流焊/波峰焊 包装
PHD9NQ20T PHD9NQ20T,118
(934055766118)
Withdrawn / End-of-life PHD9NQ 20T SOT428
DPAK
(SOT428)
SOT428 REFLOW_BG-BD-1
WAVE_BG-BD-1
SOT428_118

环境信息

下表中的所有产品型号已停产。参见表 停产信息 了解更多信息。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
PHD9NQ20T PHD9NQ20T,118 PHD9NQ20T rohs rhf
品质及可靠性免责声明

文档 (19)

文件名称 标题 类型 日期
PHD9NQ20T N-channel TrenchMOS standard level FET Data sheet 2017-06-02
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2023-02-03
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT428 3D model for products with SOT428 package Design support 2017-06-30
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
DPAK_SOT428_mk plastic, single-ended surface-mounted package (DPAK); 3 leads; 2.285 mm pitch; 6 mm x 6.6 mm x 2.3 mm body Marcom graphics 2017-01-28
SOT428 plastic, single-ended surface-mounted package (DPAK); 3 leads; 2.285 mm pitch; 6 mm x 6.6 mm x 2.3 mm body Package information 2022-05-20
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
PHD9NQ20T PHD9NQ20T SPICE model SPICE model 2012-06-08
TN00008 Power MOSFET frequently asked questions and answers Technical note 2023-01-12
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

支持

如果您需要设计/技术支持,请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
PHD9NQ20T PHD9NQ20T SPICE model SPICE model 2012-06-08
SOT428 3D model for products with SOT428 package Design support 2017-06-30

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.