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PSMN1R0-30YLC

N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using NextPower technology

Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

可订购部件

型号 可订购的器件编号 订购代码(12NC) 封装 从经销商处购买
PSMN1R0-30YLC PSMN1R0-30YLC,115 934065072115 SOT669 订单产品

特性

  • High reliability Power SO8 package, qualified to 175°C

  • Optimised for 4.5V Gate drive utilising NextPower Superjunction technology

  • Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads

  • Ultra low Rdson and low parasitic inductance

目标应用

  • DC-to-DC converters

  • Lithium-ion battery protection

  • Load switching

  • Power OR-ing

  • Server power supplies

  • Sync rectifier

参数类型

型号Package versionPackage nameProduct statusChannel typeNr of transistorsVDS [max] (V)RDSon [max] @ VGS = 10 V (mΩ)RDSon [max] @ VGS = 4.5 V (mΩ)Tj [max] (°C)ID [max] (A)QGD [typ] (nC)QG(tot) [typ] @ VGS = 4.5 V (nC)QG(tot) [typ] @ VGS = 10 V (nC)Ptot [max] (W)Qr [typ] (nC)VGSth [typ] (V)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)Date
PSMN1R0-30YLCSOT669LFPAK56; Power-SO8ProductionN1301.151.417510014.650103.5272671.41N664512102011-02-25

PCB Symbol, Footprint and 3D Model

Model Name描述

Package

型号可订购的器件编号,(订购码(12NC))状态标示封装尺寸版本回流焊/波峰焊包装
PSMN1R0-30YLCPSMN1R0-30YLC,115
( 9340 650 72115 )
Active1C030L
LFPAK56; Power-SO8
(SOT669)
SOT669REFLOW_BG-BD-1
WAVE_BG-BD-1
SOT669_115

环境信息

型号可订购的器件编号化学成分RoHSRHF指示符
PSMN1R0-30YLCPSMN1R0-30YLC,115PSMN1R0-30YLC
品质及可靠性免责声明

文档 (19)

文件名称标题类型日期
PSMN1R0-30YLCN-channel 30 V, 1.15 mΩ logic level MOSFET in LFPAK using NextPower technologyData sheet2018-04-02
AN10273Power MOSFET single-shot and repetitive avalanche ruggedness ratingApplication note2022-06-20
AN11158Understanding power MOSFET data sheet parametersApplication note2020-07-06
AN11160Designing RC SnubbersApplication note2023-02-03
AN11156Using Power MOSFET Zth CurvesApplication note2021-01-04
AN11243Failure signature of Electrical Overstress on Power MOSFETsApplication note2017-12-21
AN11158_ZHUnderstanding power MOSFET data sheet parametersApplication note2021-01-04
AN11261RC Thermal ModelsApplication note2021-03-18
AN11599Using power MOSFETs in parallelApplication note2016-07-13
AN10874_ZHLFPAK MOSFET thermal design guide, Chinese versionApplication note2020-04-30
AN11113_ZHLFPAK MOSFET thermal design guide - Part 2Application note2020-04-30
Reliability_information_t7_sot669Reliability Information T7-SOT669Quality document2022-12-21
T7_SOT669_PSMN1R0-30YLC_Nexperia_Quality_documentPSMN1R0-30YLC Quality documentQuality document2023-03-17
PSMN1R0-30YLCPSMN1R0-30YLC N-channelSPICE model2010-11-11
TN00008Power MOSFET frequently asked questions and answersTechnical note2023-01-12
PSMN1R0-30YLCThermal modelThermal model2010-11-11
SOT669_115LFPAK56; Reel pack for SMD, 7"; Q1/T1 product orientationPacking information2022-05-10
REFLOW_BG-BD-1Reflow soldering profileReflow soldering2021-04-06
WAVE_BG-BD-1Wave soldering profileWave soldering2021-09-08

支持

如果您需要设计/技术支持,请告知我们并填写 应答表, 我们会尽快回复您。

模型

文件名称标题类型日期
PSMN1R0-30YLCPSMN1R0-30YLC N-channelSPICE model2010-11-11
PSMN1R0-30YLCThermal modelThermal model2010-11-11

PCB Symbol, Footprint and 3D Model

Model Name描述

订购、定价与供货

型号Orderable part numberOrdering code (12NC)包装Packing quantity在线购买
PSMN1R0-30YLCPSMN1R0-30YLC,115934065072115SOT669_115- 订单产品

样品

安世半导体客户可通过我们的销售机构或直接通过在线样品商店订购样品: https://extranet.nexperia.com.

样品订单通常需要2-4天寄送时间。

如果您尚未取得安世半导体的直接采购帐号,我们的全球与区域经销网络可以协助您取得样品。

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.