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PSMN1R9-40YSD

N-channel 40 V, 1.9 mΩ, 200 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

200 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications.

可订购部件

型号 可订购的器件编号 订购代码(12NC) 封装 从经销商处购买
PSMN1R9-40YSD PSMN1R9-40YSDX 934660733115 SOT669 订单产品

特性

  • 200 A continuous ID(max) rating

  • Avalanche rated, 100% tested at IAS = 180 A

  • Strong SOA (linear-mode) rating

  • NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery'

  • Low QRR, QG and QGD for high system efficiency and low EMI designs

  • Schottky-Plus body-diode with low VSD, low QRR, soft recovery and low IDSS leakage

  • High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to 175 °C

  • Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints

  • Low parasitic inductance and resistance

目标应用

  • High-performance synchronous rectification

  • DC-to-DC converters

  • High performance and high efficiency server power supply

  • Brushless DC motor control

  • Battery protection

  • Load-switch and eFuse

  • Inrush management, hotswap

参数类型

型号Package versionPackage nameProduct statusChannel typeNr of transistorsVDS [max] (V)RDSon [max] @ VGS = 10 V (mΩ)Tj [max] (°C)ID [max] (A)QGD [typ] (nC)QG(tot) [typ] @ VGS = 10 V (nC)Ptot [max] (W)Qr [typ] (nC)VGSth [typ] (V)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)Date
PSMN1R9-40YSDSOT669LFPAK56; Power-SO8ProductionN1401.91752008.257194273N442711152018-07-18

PCB Symbol, Footprint and 3D Model

Model Name描述

Package

型号可订购的器件编号，（订购码(12NC)）状态标示封装尺寸版本回流焊/波峰焊包装
PSMN1R9-40YSDPSMN1R9-40YSDX
( 9346 607 33115 ) 		Active1D9S40Y
LFPAK56; Power-SO8
(SOT669) 		SOT669REFLOW_BG-BD-1
WAVE_BG-BD-1
SOT669_115

环境信息

型号可订购的器件编号化学成分RoHSRHF指示符
PSMN1R9-40YSDPSMN1R9-40YSDXPSMN1R9-40YSD
品质及可靠性免责声明

文档 (12)

文件名称标题类型日期
PSMN1R9-40YSDN-channel 40 V, 1.9 mΩ, 200 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technologyData sheet2019-09-06
Reliability_information_t9_sot669Reliability information t9_sot669Quality document2022-10-18
PSMN1R9-40YSDPSMN1R9-40YSD SPICE modelSPICE model2019-09-18
TN00008Power MOSFET frequently asked questions and answersTechnical note2023-01-12
PSMN1R9-40YSDPSMN1R9-40YSD FloTherm modelThermal model2019-11-06
PSMN1R9-40YSD_CauerPSMN1R9-40YSD Cauer modelThermal model2019-11-08
PSMN1R9-40YSD_FosterPSMN1R9-40YSD Foster modelThermal model2019-11-08
CauerModel_PSMN1R9-40YSDPSMN1R9-40YSD Cauer modelThermal model2019-11-08
FosterModel_PSMN1R9-40YSDPSMN1R9-40YSD Foster modelThermal model2019-11-08
SOT669_115LFPAK56; Reel pack for SMD, 7"; Q1/T1 product orientationPacking information2022-05-10
REFLOW_BG-BD-1Reflow soldering profileReflow soldering2021-04-06
WAVE_BG-BD-1Wave soldering profileWave soldering2021-09-08

支持

如果您需要设计/技术支持，请告知我们并填写 应答表, 我们会尽快回复您。

模型

文件名称标题类型日期
PSMN1R9-40YSDPSMN1R9-40YSD SPICE modelSPICE model2019-09-18
PSMN1R9-40YSDPSMN1R9-40YSD FloTherm modelThermal model2019-11-06
PSMN1R9-40YSD_CauerPSMN1R9-40YSD Cauer modelThermal model2019-11-08
PSMN1R9-40YSD_FosterPSMN1R9-40YSD Foster modelThermal model2019-11-08
CauerModel_PSMN1R9-40YSDPSMN1R9-40YSD Cauer modelThermal model2019-11-08
FosterModel_PSMN1R9-40YSDPSMN1R9-40YSD Foster modelThermal model2019-11-08

PCB Symbol, Footprint and 3D Model

Model Name描述

订购、定价与供货

型号Orderable part numberOrdering code (12NC)包装Packing quantity在线购买
PSMN1R9-40YSDPSMN1R9-40YSDX934660733115SOT669_115- 订单产品

样品

安世半导体客户可通过我们的销售机构或直接通过在线样品商店订购样品： https://extranet.nexperia.com.

样品订单通常需要2-4天寄送时间。

如果您尚未取得安世半导体的直接采购帐号，我们的全球与区域经销网络可以协助您取得样品。

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册