双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)
PSMN1R9-80SSJ

PSMN1R9-80SSJ Production

N-channel 80 V, 1.9 mOhm ASFET with enhanced dynamic current sharing in LFPAK88

In high-power applications, it is common practice to connect two or more MOSFETs in parallel to provide high current capability. Even when the gates are driven from the same gate driver, it can be challenging to ensure that MOSFETs share the load current equally.

Small differences in VGS(th) for individual devices cause the MOSFET with the lowest VGS(th) to turn-on first, taking a larger share of the load current during the dynamic switching phase.

The difference in load current between individual MOSFETs (ΔID) can be significant often leading to differential heating and potential accelerated failure.

One method to reduce the ΔI between MOSFETs is to select devices with matched VGS(th), but testing & sorting MOSFETs with matched VGS(th) can be a difficult process. VGS(th) is typically measured at ΔID ≤ 1 mA and is influenced by temperature also.

ASFETs with enhanced dynamic current sharing are designed to show significantly improved current sharing with low ΔID when connected in parallel applications.
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产品细节

Features and benefits

  • Removes the need for VGS(th) matching

  • Low ΔID enhances current sharing in parallel applications

  • Reduced VGS(th) spread

  • Low RDSon

  • 286 A continuous ID Max

  • Avalanche rated, 100% tested

  • Compact and Reliable 8x8 LFPAK88 package, qualified to 175 °C

Applications

  • Applications using MOSFETs in parallel

  • Applications utilizing MOSFETs with matched VGS(th)

  • High-power motor control

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More information

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交互式数据手册

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册