NextPower 80 V, 3.5 mOhm, 150 A, N-channel MOSFET in LFPAK56E package
从安世半导体购买
| SKU | 库存* | MOQ | 单位价格** | 数量 |
|---|
从经销商处购买
| 卖方 | SKU | 库存 | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | 购买 |
|---|
| 卖方 | SKU | 库存 | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | 购买 |
|---|
| 卖方 | SKU | 库存 | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | 购买 |
|---|
| 卖方 | SKU | 库存 | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | 购买 |
|---|
| 卖方 | SKU | 库存 | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | 购买 |
|---|
** 显示的单位价格是基于小量订单
*** 授权经销商销售的库存过剩、到期和停产产品由经销商保证产品的可靠性，不再由安世半导体保证
特性
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Low Qrr for higher efficiency and lower spiking
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150 A ID(max) – demonstrated continuous current rating
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Low QG × RDSon FOM for high efficiency switching applications
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Strong avalanche energy rating (Eas)
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Avalanche rated and 100% tested
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Ha-free and RoHS compliant LFPAK56E package
目标应用
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Synchronous rectifier in AC-DC and DC-DC
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Primary side switch in DC-DC
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BLDC motor control
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USB-PD adapters
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Full-bridge and half-bridge applications
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Flyback and resonant topologies
参数类型
| 型号 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PSMN3R5-80YSF | SOT1023 | LFPAK56E; Power-SO8 | Production | N | 1 | 80 | 3.5 | 175 | 150 | 13.1 | 75 | 294 | 25 | 3 | N | 5492 | 1451 | 2020-07-07 |
PCB Symbol, Footprint and 3D Model
| Model Name | 描述 |
|---|---|
Package
| 型号 | 可订购的器件编号，（订购码(12NC)） | 状态 | 标示 | 封装 | 尺寸版本 | 回流焊/波峰焊 | 包装 |
|---|---|---|---|---|---|---|---|
| PSMN3R5-80YSF | PSMN3R5-80YSFX ( 9346 615 74115 ) | Active | 3F5S80J |  LFPAK56E; Power-SO8 (SOT1023) | SOT1023 | REFLOW_BG-BD-1 | SOT1023_115 |
文档 (22)
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| PSMN3R5-80YSF | NextPower 80 V, 3.5 mOhm, 150 A, N-channel MOSFET in LFPAK56E package | Data sheet | 2021-09-03 |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
| AN11156 | Using Power MOSFET Zth Curves | Application note | 2021-01-04 |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
| AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
| AN11261 | RC Thermal Models | Application note | 2021-03-18 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| AN90001 | Designing in MOSFETs for safe and reliable gate-drive operation | Application note | 2017-05-05 |
| AN90003 | LFPAK MOSFET thermal design guide | Application note | 2023-08-22 |
| AN90011 | Half-bridge MOSFET switching and its impact on EMC | Application note | 2020-04-28 |
| AN90016 | Maximum continuous currents in NEXPERIA LFPAK power MOSFETs | Application note | 2020-09-03 |
| AN90019 | LFPAK MOSFET thermal resistance - simulation, test and optimization of PCB layout | Application note | 2020-07-20 |
| AN50005 | Paralleling power MOSFETs in high power applications | Application note | 2021-09-13 |
| AN50014 | Understanding the MOSFET peak drain current rating | Application note | 2022-03-28 |
| AN50005_translated_20230317 | 大電力アプリケーションにおけるパワーMOSFETの並列接続 | Application note | 2023-04-03 |
| SOT1023 | 3D model for products with SOT1023 package | Design support | 2017-06-29 |
| PSMN_NextPower80V_SL | PSMN NextPower80 V, SL, Precision ElectroThermal (PET) model | PET SPICE model | 2023-06-13 |
| Reliability_information_t12_sot1023 | Reliability information t12 sot1023 | Quality document | 2022-08-11 |
| T12_SOT1023_PSMN3R5-80YSF_Nexperia_Quality_document | T12 SOT1023 PSMN3R5-80YSF Nexperia Quality document | Quality document | 2022-08-11 |
| PSMN3R5-80YSF | PSMN3R5-80YSF FloTherm model | Thermal model | 2021-11-09 |
| SOT1023_115 | LFPAK56; Reel pack for SMD, 7"; Q1/T1 product orientation | Packing information | 2022-06-07 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
支持
如果您需要设计/技术支持，请告知我们并填写 应答表, 我们会尽快回复您。
模型
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| SOT1023 | 3D model for products with SOT1023 package | Design support | 2017-06-29 |
| PSMN_NextPower80V_SL | PSMN NextPower80 V, SL, Precision ElectroThermal (PET) model | PET SPICE model | 2023-06-13 |
| PSMN3R5-80YSF | PSMN3R5-80YSF FloTherm model | Thermal model | 2021-11-09 |
PCB Symbol, Footprint and 3D Model
| Model Name | 描述 |
|---|---|
订购、定价与供货
| 型号 | Orderable part number | Ordering code (12NC) | 包装 | Packing quantity | 在线购买 |
|---|---|---|---|---|---|
| PSMN3R5-80YSF | PSMN3R5-80YSFX | 934661574115 | SOT1023_115 | - | 订单产品 |
样品
安世半导体客户可通过我们的销售机构或直接通过在线样品商店订购样品： https://extranet.nexperia.com.
样品订单通常需要2-4天寄送时间。
如果您尚未取得安世半导体的直接采购帐号，我们的全球与区域经销网络可以协助您取得样品。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.