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PSMN3R5-80YSF

NextPower 80 V, 3.5 mOhm, 150 A, N-channel MOSFET in LFPAK56E package

NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications.

可订购部件

型号 可订购的器件编号 订购代码(12NC) 封装 从经销商处购买
PSMN3R5-80YSF PSMN3R5-80YSFX 934661574115 SOT1023 订单产品

特性

  • Low Qrr for higher efficiency and lower spiking

  • 150 A ID(max) – demonstrated continuous current rating

  • Low QG × RDSon FOM for high efficiency switching applications

  • Strong avalanche energy rating (Eas)

  • Avalanche rated and 100% tested

  • Ha-free and RoHS compliant LFPAK56E package

目标应用

  • Synchronous rectifier in AC-DC and DC-DC

  • Primary side switch in DC-DC

  • BLDC motor control

  • USB-PD adapters

  • Full-bridge and half-bridge applications

  • Flyback and resonant topologies

参数类型

型号Package versionPackage nameProduct statusChannel typeNr of transistorsVDS [max] (V)RDSon [max] @ VGS = 10 V (mΩ)Tj [max] (°C)ID [max] (A)QGD [typ] (nC)QG(tot) [typ] @ VGS = 10 V (nC)Ptot [max] (W)Qr [typ] (nC)VGSth [typ] (V)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)Date
PSMN3R5-80YSFSOT1023LFPAK56E; Power-SO8ProductionN1803.517515013.175294253N549214512020-07-07

PCB Symbol, Footprint and 3D Model

Model Name描述

Package

型号可订购的器件编号,(订购码(12NC))状态标示封装尺寸版本回流焊/波峰焊包装
PSMN3R5-80YSFPSMN3R5-80YSFX
( 9346 615 74115 )
Active3F5S80J
LFPAK56E; Power-SO8
(SOT1023)
SOT1023REFLOW_BG-BD-1
SOT1023_115

环境信息

型号可订购的器件编号化学成分RoHSRHF指示符
PSMN3R5-80YSFPSMN3R5-80YSFXPSMN3R5-80YSF
品质及可靠性免责声明

文档 (22)

文件名称标题类型日期
PSMN3R5-80YSFNextPower 80 V, 3.5 mOhm, 150 A, N-channel MOSFET in LFPAK56E packageData sheet2021-09-03
AN11158Understanding power MOSFET data sheet parametersApplication note2020-07-06
AN11156Using Power MOSFET Zth CurvesApplication note2021-01-04
AN11243Failure signature of Electrical Overstress on Power MOSFETsApplication note2017-12-21
AN11158_ZHUnderstanding power MOSFET data sheet parametersApplication note2021-01-04
AN11261RC Thermal ModelsApplication note2021-03-18
AN11599Using power MOSFETs in parallelApplication note2016-07-13
AN90001Designing in MOSFETs for safe and reliable gate-drive operationApplication note2017-05-05
AN90003LFPAK MOSFET thermal design guideApplication note2023-08-22
AN90011Half-bridge MOSFET switching and its impact on EMCApplication note2020-04-28
AN90016Maximum continuous currents in NEXPERIA LFPAK power MOSFETsApplication note2020-09-03
AN90019LFPAK MOSFET thermal resistance - simulation, test and optimization of PCB layoutApplication note2020-07-20
AN50005Paralleling power MOSFETs in high power applicationsApplication note2021-09-13
AN50014Understanding the MOSFET peak drain current ratingApplication note2022-03-28
AN50005_translated_20230317大電力アプリケーションにおけるパワーMOSFETの並列接続Application note2023-04-03
SOT10233D model for products with SOT1023 packageDesign support2017-06-29
PSMN_NextPower80V_SLPSMN NextPower80 V, SL, Precision ElectroThermal (PET) modelPET SPICE model2023-06-13
Reliability_information_t12_sot1023Reliability information t12 sot1023Quality document2022-08-11
T12_SOT1023_PSMN3R5-80YSF_Nexperia_Quality_documentT12 SOT1023 PSMN3R5-80YSF Nexperia Quality documentQuality document2022-08-11
PSMN3R5-80YSFPSMN3R5-80YSF FloTherm modelThermal model2021-11-09
SOT1023_115LFPAK56; Reel pack for SMD, 7"; Q1/T1 product orientationPacking information2022-06-07
REFLOW_BG-BD-1Reflow soldering profileReflow soldering2021-04-06

支持

如果您需要设计/技术支持,请告知我们并填写 应答表, 我们会尽快回复您。

模型

文件名称标题类型日期
SOT10233D model for products with SOT1023 packageDesign support2017-06-29
PSMN_NextPower80V_SLPSMN NextPower80 V, SL, Precision ElectroThermal (PET) modelPET SPICE model2023-06-13
PSMN3R5-80YSFPSMN3R5-80YSF FloTherm modelThermal model2021-11-09

PCB Symbol, Footprint and 3D Model

Model Name描述

订购、定价与供货

型号Orderable part numberOrdering code (12NC)包装Packing quantity在线购买
PSMN3R5-80YSFPSMN3R5-80YSFX934661574115SOT1023_115- 订单产品

样品

安世半导体客户可通过我们的销售机构或直接通过在线样品商店订购样品: https://extranet.nexperia.com.

样品订单通常需要2-4天寄送时间。

如果您尚未取得安世半导体的直接采购帐号,我们的全球与区域经销网络可以协助您取得样品。

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.