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PSMN4R0-30YL

N-channel 30 V 4 mΩ logic level MOSFET in LFPAK

逻辑电平N沟道增强型场效应晶体管(FET),采用塑料封装,使用TrenchMOS技术。该产品仅设计适合用于工业和通信应用。

不建议用在新设计中(NRND)。

Features and benefits

  • 低开关和导通损耗,因而效率高
  • 适用于逻辑电平栅极驱动源

Applications

  • D级放大器
  • DC-DC转换器
  • 马达控制
  • 服务器电源

参数类型

型号 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) RDSon [max] @ VGS = 4.5 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 4.5 V (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PSMN4R0-30YL
SOT669 LFPAK56; Power-SO8 Not for design in N 1 30 4 5.25 175 100 4.2999997 17.6 36.6 69 36 1.7 N 2090 469 2011-03-10

封装

型号 可订购的器件编号,(订购码(12NC)) 状态 标示 封装 外形图 回流焊/波峰焊 包装
PSMN4R0-30YL
PSMN4R0-30YL,115
(934063074115)
Active 4R030 SOT669
LFPAK56; Power-SO8
(SOT669)
SOT669 REFLOW_BG-BD-1
WAVE_BG-BD-1
SOT669_115

环境信息

型号 可订购的器件编号 化学成分 RoHS RHF指示符
PSMN4R0-30YL
PSMN4R0-30YL,115 PSMN4R0-30YL rohs rhf
品质及可靠性免责声明

文档 (24)

文件名称 标题 类型 日期
PSMN4R0-30YL N-channel 30 V 4 mOhm logic level MOSFET in LFPAK Data sheet 2017-05-04
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2023-02-03
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT669 3D model for products with SOT669 package Design support 2017-06-30
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
LFPAK56_POWER-SO8_SOT669_mk plastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body Marcom graphics 2017-01-28
SOT669_115 LFPAK56; Reel pack for SMD, 7"; Q1/T1 product orientation Packing information 2022-05-10
Reliability_information_t6_sot669 Reliability qualification information Quality document 2022-10-13
T6_SOT669_PSMN4R0-30YL_Nexperia_Quality_document PSMN4R0-30YL Quality document Quality document 2022-10-12
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
PSMN4R0-30YL PSMN4R0-30YL SPICE model SPICE model 2015-03-29
TN00008 Power MOSFET frequently asked questions and answers Technical note 2023-01-12
PSMN4R0-30YL PSMN4R0-30YL Thermal model Thermal model 2008-08-26
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

支持

如果您需要设计/技术支持,请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
PSMN4R0-30YL PSMN4R0-30YL SPICE model SPICE model 2015-03-29
PSMN4R0-30YL PSMN4R0-30YL Thermal model Thermal model 2008-08-26
SOT669 3D model for products with SOT669 package Design support 2017-06-30

订购、定价与供货

型号 Orderable part number Ordering code (12NC) 状态 包装 Packing Quantity 在线购买
PSMN4R0-30YL PSMN4R0-30YL,115 934063074115 Active SOT669_115 1,500 订单产品

样品

安世半导体客户可通过我们的销售机构或直接通过在线样品商店订购样品: https://extranet.nexperia.com.

样品订单通常需要2-4天寄送时间。

如果您尚未取得安世半导体的直接采购帐号,我们的全球与区域经销网络可以协助您取得样品。

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

可订购部件

型号 可订购的器件编号 订购代码(12NC) 封装 从经销商处购买
PSMN4R0-30YL PSMN4R0-30YL,115 934063074115 SOT669 订单产品