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PSMN5R6-100XS

N-channel 100V 5.6 mΩ standard level MOSFET in TO220F (SOT186A)

Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

不建议用在新设计中(NRND)。
该产品已停产。参见单击此处了解停产信息和替代产品。

可订购部件

型号 可订购的器件编号 订购代码(12NC) 封装 从经销商处购买

特性

  • High efficiency due to low switching and conduction losses
  • TO220 package
  • Suitable for standard level gate drive

目标应用

  • AC-to-DC power supply equipment
  • Motor control
  • Server power supplies
  • Synchronous rectification

参数类型

型号Package versionPackage nameProduct statusChannel typeNr of transistorsVDS [max] (V)RDSon [max] @ VGS = 10 V (mΩ)Tj [max] (°C)ID [max] (A)QGD [typ] (nC)QG(tot) [typ] @ VGS = 10 V (nC)Ptot [max] (W)Qr [typ] (nC)VGSth [typ] (V)Automotive qualifiedCiss [typ] (pF)Coss [typ] (pF)Date
PSMN5R6-100XS
NRND
SOT186ATO-220FEnd of lifeN11005.617561.841.2145601823N80615612011-07-08

PCB Symbol, Footprint and 3D Model

Model Name描述

Package

下表中的所有产品型号已停产。参见表 停产信息 了解更多信息。

型号可订购的器件编号,(订购码(12NC))状态标示封装尺寸版本回流焊/波峰焊包装
PSMN5R6-100XS
NRND
PSMN5R6-100XS,127
( 9340 660 41127 )
Withdrawn / End-of-lifePSMN5R6-100XS
TO-220F
(SOT186A)
SOT186ASOT186A_127

停产信息

型号可订购的器件编号Ordering code最后一次购买日期最后一次交货日期替代产品状态备注
PSMN5R6-100XS
NRND
PSMN5R6-100XS,127934066041127

环境信息

下表中的所有产品型号已停产。参见表 停产信息 了解更多信息。

型号可订购的器件编号化学成分RoHSRHF指示符
PSMN5R6-100XS
NRND
PSMN5R6-100XS,127暂无信息
品质及可靠性免责声明

文档 (14)

文件名称标题类型日期
PSMN5R6-100XSN-channel 100V 5.6 mOhm standard level MOSFET in TO220F (SOT186A)Data sheet2012-03-06
AN10273Power MOSFET single-shot and repetitive avalanche ruggedness ratingApplication note2022-06-20
AN11158Understanding power MOSFET data sheet parametersApplication note2020-07-06
AN11160Designing RC SnubbersApplication note2023-02-03
AN11156Using Power MOSFET Zth CurvesApplication note2021-01-04
AN11243Failure signature of Electrical Overstress on Power MOSFETsApplication note2017-12-21
AN11158_ZHUnderstanding power MOSFET data sheet parametersApplication note2021-01-04
AN11261RC Thermal ModelsApplication note2021-03-18
AN11599Using power MOSFETs in parallelApplication note2016-07-13
AN10874_ZHLFPAK MOSFET thermal design guide, Chinese versionApplication note2020-04-30
AN11113_ZHLFPAK MOSFET thermal design guide - Part 2Application note2020-04-30
PSMN5R6-100XSPSMN5R6-100XS Spice modelSPICE model2012-03-19
TN00008Power MOSFET frequently asked questions and answersTechnical note2023-01-12
PSMN5R6-100XSPSMN5R6-100XS Thermal modelThermal model2012-03-14

支持

如果您需要设计/技术支持,请告知我们并填写 应答表, 我们会尽快回复您。

模型

文件名称标题类型日期
PSMN5R6-100XSPSMN5R6-100XS Spice modelSPICE model2012-03-19
PSMN5R6-100XSPSMN5R6-100XS Thermal modelThermal model2012-03-14

PCB Symbol, Footprint and 3D Model

Model Name描述

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.