PSMN6R4-30MLD

N-channel 30 V, 6.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology

Logic level gate drive N-channel enhancement mode MOSFET in an LFPAK33 package. The NextPowerS3 portfolio, utilising Nexperia’s unique “SchottkyPlus” technology, delivers high efficiency and the low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like body diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

N-channel 30 V, 6.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology

从安世半导体购买

SKU	库存*	MOQ	单位价格**	数量

从经销商处购买

卖方	SKU	库存	MOQ		1	10	100	1,000	10,000	购买

卖方	SKU	库存	MOQ		1	10	100	1,000	10,000	购买

卖方	SKU	库存	MOQ		1	10	100	1,000	10,000	购买

卖方	SKU	库存	MOQ		1	10	100	1,000	10,000	购买

* 库存数量可能变化
** 显示的单位价格是基于小量订单
*** 授权经销商销售的库存过剩、到期和停产产品由经销商保证产品的可靠性，不再由安世半导体保证

特性

Ultra low Q_G, Q_GD and Q_OSS for high system efficiency, especially at higher switching frequencies
Superfast switching with soft-recovery; s-factor > 1
Low spiking and ringing for low EMI designs
Unique “SchottkyPlus” technology; Schottky-like performance with < 1µA leakage at 25°C
Optimised for 4.5 V gate drive
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Mini Power SO8 package; no glue, no wire bonds, qualified to 175°C
Exposed leads for optimal visual solder inspection

目标应用

On-board DC-to-DC solutions for server and telecommunications
Secondary-side synchronous rectification in telecommunication applications
Voltage regulator modules (VRM)
Point-of-Load (POL) modules
Power delivery for V-core, ASIC, DDR, GPU, VGA and system components
Brushed and brushless motor control

参数类型

型号	Package version	Package name	Product status	Channel type	Number of transistors	V_DS [max] (V)	R_DSon [max] @ V_GS = 10 V (mΩ)	R_DSon [max] @ V_GS = 4.5 V (mΩ)	T_j [max] (°C)	I_D [max] (A)	Q_GD [typ] (nC)	Q_G(tot) [typ] @ V_GS = 4.5 V (nC)	Q_G(tot) [typ] @ V_GS = 10 V (nC)	P_tot [max] (W)	Q_r [typ] (nC)	V_GSth [typ] (V)	Automotive qualified	C_iss [typ] (pF)	C_oss [typ] (pF)	Date
PSMN6R4-30MLD	SOT1210	LFPAK33	Production	N	1	30	6.3	8.3	175	66	1.8	6.5	13.7	51	12.6	1.7	N	832	587	2013-10-02

Package

型号	可订购的器件编号，（订购码(12NC)）	状态	标示	封装	尺寸版本	回流焊/波峰焊	包装
PSMN6R4-30MLD	PSMN6R4-30MLDX ( 9340 680 65115 )	Active	6D430L	LFPAK33 (SOT1210)	SOT1210		Reel 7” Q1/T1 or Q2/T3

品质、可靠性及化学成分

型号	可订购的器件编号	化学成分	RoHS / RHF	MSL	MSL无铅
PSMN6R4-30MLD	PSMN6R4-30MLDX	PSMN6R4-30MLD		1	1

品质及可靠性免责声明

文档 (7)

文件名称	标题	类型	日期
PSMN6R4-30MLD	N-channel 30 V, 6.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology	Data sheet	2019-03-06
AN11261	RC Thermal Models	Application note	2020-05-11
AN11599	Using power MOSFETs in parallel	Application note	2016-07-13
AN90003	LFPAK MOSFET thermal design guide	Application note	2021-01-22
AN10874_ZH	LFPAK MOSFET thermal design guide, Chinese version	Application note	2020-04-30
AN11113_ZH	LFPAK MOSFET thermal design guide - Part 2	Application note	2020-04-30
TN00008	Power MOSFET frequently asked questions and answers	Technical note	2020-06-24

支持

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订购、定价与供货

型号	Orderable part number	Ordering code (12NC)	包装	在线购买
PSMN6R4-30MLD	PSMN6R4-30MLDX	934068065115	Reel 7” Q1/T1 or Q2/T3	订单产品

样品

安世半导体客户可通过我们的销售机构或直接通过在线样品商店订购样品： https://extranet.nexperia.com.

样品订单通常需要2-4天寄送时间。

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